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"Anisotropy"

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"Anisotropy"

Localized Stress-Enhanced Piezoelectricity of Anisotropic Barium Titanate Nanowires in Piezoelectric Composites for Application in Healthcare Sensors
Yumin Kwon, Yubin Kim, Hoseok Lee, Minjeong Ha
J Korean Inst Electr Electron Mater Eng 2025;38(1):1-7.   Published online January 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.1.1
The search for sustainable and efficient energy conversion technologies is becoming increasingly critical in response to global energy and environmental challenges. Traditional lead-based piezoelectric materials, such as lead zirconate titanate (PZT), have high piezoelectric constant but present significant health problems and environmental risks due to their hazardous metal contaminants. This study addresses these concerns by investigating barium titanate (BTO), a lead-free alternative, and enhancing its performance using anisotropic nanowires (NWs) structures. BTO NWs were synthesized via a two-step hydrothermal method and incorporated into a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] matrix to fabricate a piezoelectric composite film. The resulting device demonstrated a notable increase in electrical output compared to devices based on isotropic morphology of BTO nanoparticles, exhibiting enhanced performance. These findings suggest that BTO NWs hold significant promise for applications in flexible and wearable electronics, paving the way for further advancements in sustainable energy technology.

Citations

Citations to this article as recorded by  
  • Interphase engineering in carbon black–reinforced piezoelectric nanocomposites: A combined experimental and micromechanical modeling study
    Ziwen Zhao, Masoumeh Khamehchi, Mohammad J. Mahmoodi, Zhenjin Wang, Fumio Narita
    Materials & Design.2026; 268: 116391.     CrossRef
  • MXene-reinforced ultrasensitive piezoelectric pressure sensors based on P(VDF-TrFE) nanofibers with hybrid nanofillers
    Jingyi Yang, Jianqiao Wang, Zike Guo, Shuai Liu, Yaohua Dong, Peng Zhou, Tianjin Zhang, Yajun Qi
    Journal of Alloys and Compounds.2026; 1079: 189867.     CrossRef
  • Layer-engineered BNBT–polymer films for multifunctional applications
    M. Vijatovic Petrovic, A. Dzunuzovic, J. Bobic, Z. Despotovic, F. Cordero, E. Mercadelli, Z. Radovanovic, F. Craciun
    Journal of Alloys and Compounds.2026; 1079: 189972.     CrossRef
  • Piezoionic sensor devices of integrated gradient electrolyte gels
    Yi Fang, Hongbing Li, Taeuk Eom, Chang Kyu Jeong, Yong Zhang
    Chemical Engineering Journal.2026; 540: 177542.     CrossRef
  • Interfacial polarization triggered by low-k fillers boosts piezoelectricity of MMT/PT composites for intelligent health monitoring
    Yong Ao, Junjun Yuan, Wenqi Yu, Rui Yuan, Boling Lan, Shenglong Wang, Tingting Zhou, Guicen Liu, Wei Zhao, Zhiyuan Gao, Xiaofei Jiang, Weili Deng, Long Jin, Weiqing Yang
    Journal of Materials Chemistry A.2026;[Epub]     CrossRef
  • Interfacial Engineering of Composite Piezoelectric Fibers Via an Anchor-Chain Architecture
    Jun Liu, Qiao Zhou, Pengcheng Zhang, Shuying Hu, Fang Zhou, Shuangshuang Ren, Ting Guo, Leiying Miao
    ACS Applied Engineering Materials.2026; 4(8): 4367.     CrossRef
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Anisotropy of the Hall Factor According to the Growth Direction in the Two-dimensional Device with Indirect Conduction Valley
Jong Gu Kim, Jae Chul Lee, Sang Kook Chun
J Korean Inst Electr Electron Mater Eng 2014;27(7):428-432.   Published online July 1, 2014
DOI: https://doi.org/10.4313/JKEM.2014.27.7.428
The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropic ally distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.
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Control of Tilt Angle in the Nematic Liquid Crystal on the Homeotropic Polyimide Surface as a Function of the Baking Condition
Jeoung Yeon Hwang, Kyung Jun Lee, Kang Woo Kim, Dae Shik Seo
J Korean Inst Electr Electron Mater Eng 2004;17(6):661-667.   Published online June 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.6.661
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Fabrication and Properties of MI Sensor Device using CoZrNb Films
Jin Heo, Yeong Hag Kim, Gwang Ho Sin, Gong Geon Sa
J Korean Inst Electr Electron Mater Eng 2004;17(1):52-58.   Published online January 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.1.052
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Origin of the Initial Permeabiliy of Ni0.8-xZn0.2Fe2O4+δ Ferrite
Yong Un An, Jong Lyeong Kim, Yeong U O
J Korean Inst Electr Electron Mater Eng 2004;17(1):46-51.   Published online January 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.1.046
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Display : Study of the Electro-Optic Characteristics Depending on Electric Characteristic of the Black Matrix in a Homogeneous Liquid Crystal Cell Driven by Fringe-Electric Field
Mi Sug Kim, Hyang Yul Kim, Jae Wan Go, Seung Hui Lee
J Korean Inst Electr Electron Mater Eng 2003;16(11):1008-1013.   Published online November 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.11.1008
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Simulations of Ferromagnetic Resonance Spectra Excited in Magnetic Bilayers
Yark Yeon Kim, Gee Pyeong Han, Seong Cho Yu
J Korean Inst Electr Electron Mater Eng 2003;16(3):238-246.   Published online March 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.3.238
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Display : Dynamic Stability Depending on the Dielectric Anisotropy of the LC in the Fringe-Field Switching (FFS) mode
M. S. Kim, H. Y. Kim, S. H. Lee
J Korean Inst Electr Electron Mater Eng 2003;16(3):224-230.   Published online March 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.3.224
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Optical Devices : Characteristics of the Photoinduced Anisotropy(PA) in Ag/AsGeSeS Multilayer Thin Films
Cheol Ho Yeo, Sun Woong Na, Kyun Shin, Jeong II Park, Hong Bay Chung
J Korean Inst Electr Electron Mater Eng 2003;16(2):144-150.   Published online February 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.2.144
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Magnetic Properties of FeCoSiB Amorphous Films Annealed in Magnetic Field
Gwang Ho Sin, Yeong Hag Kim, Gong Geon Sa
J Korean Inst Electr Electron Mater Eng 2003;16(12s):1305-1309.
DOI: https://doi.org/10.4313/JKEM.2003.16.12s.1305
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