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"APCVD"

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"APCVD"

Growth of Single Crystalline 3C-SiC Thin Films for High Power Devices by CVD
Gwiy Sang Chung, Jae Cheol Shim
J Korean Inst Electr Electron Mater Eng 2010;23(2):98-102.   Published online February 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.2.098
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Raman Scattering Characteristics on 3C-SiC Thin Films Deposited by APCVD Method
J Korean Inst Electr Electron Mater Eng 2007;20(7):606-610.   Published online July 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.7.606
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Growth of Polycrystalline 3C-SiC Thin Films using HMDS Single Precursor
J Korean Inst Electr Electron Mater Eng 2007;20(2):156-161.   Published online February 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.2.156
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Passivation of Silicon Oxide Film Deposited at Low Temperature by Annealing in Nitrogen Ambient
J Korean Inst Electr Electron Mater Eng 2006;19(4):334-338.   Published online April 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.4.334
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Studies for Improvement in SiO2, Film Property for Thin Film Transistor
Chang Ki Seo, Myung Suk Shim, Jun Sin Yi
J Korean Inst Electr Electron Mater Eng 2004;17(6):580-585.   Published online June 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.6.580
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