Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Page Path

  • HOME
  • BROWSE ARTICLES
  • Previous issues
15
results for

Previous issues

Keywords

Authors

Previous issues

Prev issue Next issue

Volume 25(9); September 2012

Breakdown Voltage and On-resistance Characteristics of N-channel EDMOS with Dual Work Function Gate
Min Sun Kim, Ki Ju Baek, Yeong Seuk Kim, Kee Yeol Na
J Electr Electron Mater 2012;25(9):671-676.   Published online September 1, 2012
In this paper, TCAD assessment of 30 V class n channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described, Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device i.e. higher transconductance (gm), better drain output current (ION), reduced specific on-resistances (R0N) and higher breakdown characteristics (BVDss).
  • 3 View
  • 0 Download
Electrical Performance of Amorphous SiZnSnO TFTs Depending on Annealing Temperature
Sang Yeol Lee
J Electr Electron Mater 2012;25(9):677-680.   Published online September 1, 2012
The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (UFE) increased and threshold voltage (Vth) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in V1h and increase in on-current.
  • 4 View
  • 0 Download
Dry Etching Characteristics of TiN Thin Films in BCI3He Inductively Coupled Plasma
Young Hee Joo, Jong Chang Woo, Chang Ii Kim
J Electr Electron Mater 2012;25(9):681-685.   Published online September 1, 2012
We investigated the dry etching characteristics of TiN in TiN/A12O3: gate stack using a inductively coupled plasma system. TiN thin film is etched by BCI3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in BClilHe (25%:75%) plasma. The selectivity of TIN thin film to Al2O3 is pretty similar with BCI3/He plasma, The chemical reactions of the etched TiN thin films arc investigated by X - ray photoelectron spectroscopy, The intensities of the Ti 2p and the N is peaks are modified by BCl3: plasma, Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non volatile byproducts such as TiClx formed by chemical reaction with CI radicals on the surface of TiN thin films.
  • 4 View
  • 0 Download
Chaotic Dynamics of a Tansconductor-based Chua`s Circuit According to Temperature Variation
Bong Jo Shin, Han Jung Song
J Electr Electron Mater 2012;25(9):686-691.   Published online September 1, 2012
In this paper, we designed a Chua`s chaotic circuit using transcondcutor based nonlinear resistor. Proposed chaotic circuit consist of L, C, R and transcondcutor based Chua`s diode. We performed SPICE simulation for chaotic dynamics such as time seriesform, frequency analysis and phase plane of the circuit. Chaotic dynamics of the circuit was analysed according to MOS size variation of the operational transconductance amplifier. Also, we performed SPICE circuit analysis for temperature dependance of the circuit. SPICE results showed that chaotic dynamics of the circuit varied according to the temperature variation and chaotic signals were generated in specific temperature conditions.
  • 4 View
  • 0 Download
BLFeO3-based Lead-free Piezoelectric Ceramics
Jin Hong Choi, Hyun Ah Kim, Seung Ho Han, Hyung Won Kang, Hyeung Gyu Lee, Jeong Seog Kim, Chae Ii Cheon
J Electr Electron Mater 2012;25(9):692-701.   Published online September 1, 2012
Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as (Bi, Na) Ti03-(Bi, K) Ti03-BaTiO3, (Na, K) Nb03-LiSbO3, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. BiFeO3 has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature (Tc=1,100 K). And a very large electric polarization of 50~60 uC/cm2 has been reported both in epitaxial thin film and single crystal BiFeO3. Therefore, a high piezoelectric effect is expected also in a BiFeO3 ceramics. The recent research activities on BiFeO3 or BiFeO3-based solid solutions are reviewed in this article.
  • 5 View
  • 0 Download
Eco-friendly Ceramic Materials for Shear Mode Piezoelectric Energy Harvesting
Seung Ho Han, Hwi Yeol Park, Hyung Won Kang, Hyeung Gyu Lee
J Electr Electron Mater 2012;25(9):702-710.   Published online September 1, 2012
Eco-friendly (Na, K) Nb03 (NKN)-based piezoelectric ceramic materials were fabricated by conventional ceramic method for shear mode piezoelectric energy harvesting application. NKN-LiTaO3 (LT) based compositions were adopted for the high d15xg15 which is proportional to harvested energy density. The composition 0.935(Na0.535K0.485) NbO3-0.065LiTaO3 was found to be lie on the boundary of tetragonal and orthorhombic phases. With reducing Ta content, the dielectric constant decreased gradually while maintaining high d15, which resulted in increased d15xg15, The composition 0.935(Nao0.535K0.485)) NbO-0.065Li (Nb0.990Ta0.0010) O3 was found to possess excellent piezoelectric and electromechanical properties (d15sxg15 =29 pm2/N, d13 417pC/N, k15= 0.55), and high curie temperature (T 455t).
  • 8 View
  • 0 Download
Thin Films and Sensors : Photo - induced Electron Transfer (PET) Based Luminescent Chemosensors Detecting Hazardous Substances
Sung Ho Yoon
J Electr Electron Mater 2012;25(9):711-716.   Published online September 1, 2012
Based on both organic synthesis and theoretical calculations on the effects of molecular orbital energy levels of amines on the of fluorescence properties of the fluorophore, fluorescent "turn-on" chemosensors detecting hazardous substances, including aldehyde chemicals and Hg2 ion, were developed.
  • 5 View
  • 0 Download
Thin Films and Sensors : Effect of Oxygen Pressure on the Structure Properties of Mgo.5Zno.5O Thin Films Grown by Pulsed Laser Deposition
Chang Hoi Kim, Hong Seung Kim, Jong Hoon Lee, Mi Seon Park, Min Wook Pin, Won Jae Lee, Nak Won Jang
J Electr Electron Mater 2012;25(9):717-722.   Published online September 1, 2012
In this work, we study on the effects of the oxygen pressure on the structural and crystalline of MgZnO thin films. MgZnO thin films were deposited on p-Si (111) substrates by using pulsed laser deposition. The X-ray diffraction analysis and energy dispersive X-ray results revealed that as the oxygen pressure increased and Mg content in the MgZnO films decreased. Also Crystal structure was changed from cubic rock salt to hexagonal wurtzite. Alpha step and atomic force microscopy results showed that the thickness of the films are about 100 nm, and it has been found that the MgZnO (002) preferred orientation were deposited with increasing the oxygen pressure. Therefore, the effect of the preferred orientation, the crystallization grew in the form of the columnar; Grain size and RMS of the films were increased with increasing oxygen pressure.
  • 4 View
  • 0 Download
Display and Optical Devices : Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application
Hwa Jin Park, S J Yu, K Anil, Yong Gon Yi, J H Kim, T S Han
J Electr Electron Mater 2012;25(9):723-726.   Published online September 1, 2012
A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch off current of 8.82mA and 11.56mA were obtained for small and large cell in the CED chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V, Measured knee voltage, Vk were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0mA of current was obtained. The pinch off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.
  • 4 View
  • 0 Download
High Voltage and Discharge Engineering : Detection of Partial Discharges by a Monopole Antenna in Insulation Oil
Dae Won Park, Jung Yoon Lee, Gyung Suk Kil
J Electr Electron Mater 2012;25(9):727-731.   Published online September 1, 2012
This paper dealt with the measurement and analysis of electromagnetic waves radiated from a partial discharge (PD) source in insulation oil to apply condition monitoring of oil-immersed transformers. Two types of narrow-band monopole antennas with the resonant frequency of a 500 MHz and a 1 GHz were designed and fabricated. Also, a needle plane electrode system was manufactured to simulate PDs and the curvature radius of the needle is 10 pm and the diameter of the plane is 60 mm. Electromagnetic wave was measured by the PD measurement system with the monopole antennas. Detection sensitivity of the fabricated antenna was compared for the same P1) magnitude; 620 mVpeak for the 500 MHz antenna and 960 mV1,t for the 1 GHz antenna to the PD magnitude of 74 pC. Consequently, the 1 GHz monopole antenna is more effective to detect PDs in oil immersed transformers.
  • 4 View
  • 0 Download
High Voltage and Discharge Engineering : Electrostatic Electrification Properties due to Square of Silicone Rubber
Sung Ill Lee
J Electr Electron Mater 2012;25(9):732-737.   Published online September 1, 2012
This study made a specimen (contact surface size: 45 rinnxO.02 mmx45-55 nm) with silicon rubber for low voltage cable with 50 phr silica filler. The electrification voltage of electrostatics were measured for different sizes of contact surface with the applied voltage of 10kV and the environmental settings of temperature (25 -40t) and humidity (40 -80%). The following conclusions were made. The electrification voltage of electrostatics decreased as the humidity increased. The electrification voltage of electrostatics increased as the temperature increased. The larger the surface size, the higher the electrification voltage of electrostatics. The property of the material had more effect on the relaxation time than the humidity.
  • 4 View
  • 0 Download
Light Source and Application Technology : A Study on the Heat Rediation of LED Luminaire and the Indoor Temperature Increase
Dong Geon Kim, Gyung Suk Kil
J Electr Electron Mater 2012;25(9):738-742.   Published online September 1, 2012
This paper conducted a study on how the heat radiation of light emitting diode (LEI)) luminaires affects the indoor temperature increase. The effect was compared with that of a 20 W compact fluorescent lamp (CFL) and a 50 W MuG halogen lamp which are most widely used inside of cruises, a LED downlight and a 4W MRI6 LED replacing each of them. We installed a luminarie inside a thermally shielded chamber, measuring the temperature changes under the same volume every 5 minutes and compared the result with theoretically calculated heat radiation, The temperature changes in the chamber was measured four times, on seven hours` period in order to keep sufficient time once the temperature reaches the thermal equilibrium state. The results showed that the temperature of the 20 W E26 CFL and the 10 W LED downlight increased by 21,1`C and 10.4t respectively, while that of the 50 W halogen MRI6 and the 4 W LED MR16 increased by 33.9t and 4.8t respectively. The experimental heat radiation were calculated from the results and the experimental heat radiation of the CFL and the LED downlight were 171.5 cal and 86.5 cal, and those of the halogen MR16 and the LED MR16 were 275.3 cal and 36.5 cal, Therefore, the heat radiation was reduced by 49.5% and 86.7%, respectively, by replacing conventional light source with LED. In conclusion, we can expect a reduction of power consumption in air condition system and the effect on indoor temperature increase by application of LED luminaires.
  • 4 View
  • 0 Download
Light Source and Application Technology : Design and Fabrication of LED Navigation Lights
Ii Kwon Kim, Dong Geon Kim, Gyung Suk Kil, Heung Gi Cho, Kyu Lyong Cho
J Electr Electron Mater 2012;25(9):743-749.   Published online September 1, 2012
In this paper, we designed and fabricated LED navigation lights which can replace the existing ones immediately and overcome disadvantages due to use of conventional lamps. To decide the best arrangement and position of a LED module, optical systems of existing navigation lights were analyzed and refracted routes of rays were simulated. The electrical and optical characteristics of the fabricated LED navigation lights were measured and analyzed with a goniophotometer. To calculate ranges of visibility, the vertical and horizontal luminous intensity distributions were evaluated in accordance with the COLREGs (convention on the international regulation for preventing collisions at Sea). From the results, the proposed LED navigation lights showed suitable characteristics for marine environment with the power consumption reduced by 90% and the maximum luminous intensity increased by 20% compared to the existing navigation lights.
  • 5 View
  • 0 Download
Light Source and Application Technology : Analysis of the Electrical and Optical Properties in Omnidirectional LED Bulbs by Energy Star
Yu Sin Kim, Ho June Bae, Gi Hoon Kim, Hyun Sik Kim, Sang Bin Song
J Electr Electron Mater 2012;25(9):750-754.   Published online September 1, 2012
An LED (light emitting diode) has the advantages of lower power consumption, energy saving, high efficiency, long lifetime, and environmental friendliness so that it has been getting the spotlight as a next-generation light source. Thus, the application range of an LED has been extended to various fields including indoor and outdoor lighting, Recently, the high efficient LED lighting has been developed, an LED has been extended its market rapidly every year and is expected to replace the general light source within near future, In this study were measured electrical and optical properties for 6 types of LED bulbs which are being developed to replace the general incandescent lamps, and were analysed under the standard of the omnidirectional lamp required by the Energy Star.
  • 4 View
  • 0 Download
Light Source and Application Technology : Fabrication of LED Solar Simulator for the Evaluation of Large Solar Panel
Kwang Kyo Jung, Joo Hyun Kim, Jae Jun Ryu, Seok Hwan Lee, Young Soo Ko, San Huh, Sung Deuk Moon, Seung Hyun Lee, Dong Hyun Kim, Mi Na Jang, Jeong Mi Kim
J Electr Electron Mater 2012;25(9):755-758.   Published online September 1, 2012
We developed a new solar simulator to evaluate a large scale solar cell using seven kinds of LEDs (Infrared, Red, Yellow, Green, Blue, White and Ultra Violet LED). LED solar simulator can be displaced the existing solar simulator which has several demerits such as high power consumption and short lifetime. We have tried to fabricate LED solar simulator which fulfills the spectrum for AM 1.5G condition, and to verify the feasibility of LED solar simulator.
  • 4 View
  • 0 Download