Abstract: The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to 800℃. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.

Abstract: We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at 950℃ in mixture gas (N(2) 90% + H(2) balanced). The specific contact resistance was 3.6×10-4 Ω㎝2 after annealing at 950℃. The XRD results of the alloyed contact layer show that formation of NiSi2 layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at 500℃ in mixture gas (N(2) 90% + H(2) balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (η) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

Abstract: In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ±5% and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ㎛X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

Abstract: In this study, the piezoelectric energy harvester was investigated employing the pillar structure with the diameter size of 50～500 um. Usually, the aspect ratio between the height and diameter was related with the piezoelectric performance. High aspect ratio was showed the low electric noise and high piezoelectric properties than low aspect ratio. Therefore, we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the 250 μm. In this presentation, we will report the process and properties of micro pillar structure based on the PMN-PZT (Pb(Mg(1/3)Nb(2/3))O(3)-PbZrTiO(3)) materials.

Abstract: The devices based on electrically erasable programmable read-only memory (EEPROM) structure are proposed for the detection of external electric charges. A large size charge contact window (CCW) extended from the floating gate is employed to immobilize external charges, and a control gate with stacked metal-insulator-metal (MIM) capacitor is adapted for a standard single polysilicon CMOS process. When positive voltage is applied to the capacitor of CCW of an n-channel EEPROM, the drain current increases due to the negative shift of its threshold voltage. Also when a pre-charged external capacitor is directly connected to the floating gate metal of CCW, the positive charges of the external capacitor make the drain current increase for n-channel, whereas the negative charges cause it to decrease. For an p-channel, however, the opposite behaviors are observed by the external voltage and charges. With the attachment of external charges to the CCW of EEPROM inverter, the characteristic inverter voltage behavior shifts from the reference curve dependent on external charge polarity. Therefore, we have demonstrated that the EEPROM inverter is capable of detecting external immobilized charges on the floating gate. and these devices are applicable to sensing the pH`s or biomolecular reactions.

Abstract: This study investigated the characteristics of fracture behavior and mode on solder joints before and after thermal shock test for automotive application component using Sn-3.0Ag-0.5Cu solder, which has a outstanding property as lead-free solder. The shear strength was decreased with thermal cycle number, after 432 cycles of thermal shock test. In addition, fracture mode was verified to ductile, brittle fracture and base materials fracture such as different kind fractured mode using SEM and EDS. Before the thermal shock, the fractured mode was found to typical ductile fracture in solder layer. After thermal shock test, especially, Ag was found on fractured portion as roughest surface. Moreover, it occurred delamination between a PCB and a Cu land. Before thermal shock test, most of fractured mode in solder layer has dimples by ductile fracture. However, after thermal shock test, the fractured mode became a combination of ductile and brittle fracture, and it also could find that the fracture behavior varied including delamination between substrate and Cu land.

Abstract: (K(0.5)Na(0.5)) (Nb(0.96)Sb(0.04)) O(3)+1.2 mol% K(4)CuNb(8)O(23) ceramics doped with iron oxide (Fe(2)O(3)) were prepared by a conventional mixed oxide method. And then, their piezoelectric and dielectric properties were investigated as a function of Fe(2)O(3) addition. X-ray diffraction studies reveal that Fe(3+) diffuses into the NKN lattices to form a solid solution with a pure perovskite structure at room temperature. At the sintering temperature of 1,060℃, when 0.2 mol% Fe(2)O(3) was doped, the piezoelectric constant (d(33)), electromechanical coupling factor (Kp), and mechanical quality factor (Qm) showed the excellent values of 131.67 pC/N, 0.436, and 696.36, respectively. Results show that Fe(2)O(3) deped (K(0.5)Na(0.5))(Nb(0.96)Sb(0.04))O(3)+1.2 mol% K(4)CuNb(8)O(23) lead-free piezoelectric ceramics are a promising lead free material for piezoelectric transformer applications.

Abstract: Cu doped SnO(2) thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at 500℃ in air, respectively. Structural properties of SnO(2) by X-ray diffraction showed (110), (101) and (211) dominant tetragonal phase. The effects of catalyst Cu in SnO(2)-based gas sensors were investigated. Sensitivity of SnO(2):Cu sensors to 2,000 ppm CO(2) gas and 50 ppm H(2)S gas was investigated for various Cu concentration. The highest sensitivity to CO(2) gas and H(2)S gas of Cu doped SnO(2) gas sensors was observed at the 8 wt% and 12 wt% Cu concentration, respectively. The improved sensitivity in the Cu doped SnO(2) gas sensors was explained by decrease of electron depletion region in Cu and SnO(2) junction, and increase of reactive oxygen and surface area in the SnO(2).

Abstract: ZnS: Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. The optical properties and structures of ZnS: Mn, Cu phosphors were investigated by x-ray diffraction, photoluminescence, and scanning electro microscopy. Photoluminescence excitation spectra originated from Mn(2+) were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with (4)T(1)→(6)A(1) transition of Mn(2+) ions in ZnS: Mn, Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. The enhanced photoluminescent intensity in the ZnS: Mn, Cu phosphors was interpreted by energy transfer from Cu to Mn.

Abstract: The measurement of contact wire wear in electric railways is one of the key test parameters to increase speed and maintain safety in electric railways. Wear caused by continuous interaction between pantographs and contact wires has a negative effect on current collection quality and severely damaged contact wires might cause hazardous accidents. This paper introduces a non-contact optical-based contact wire wear measuring system that will replace conventional wear detecting methods conducted by maintenance vehicles or workers. The system is implemented by high-speed cameras that can collect images of contact wires during vehicle operation, a laser used to create images profile of the contact wire surface, and a computer used to process the collected images. The proposed system is designed to assist maintenance of overhead contact lines by creating geometrically plotted images of contact wires to detect contact wire wear during operation on conventional lines or high-speed lines.

Abstract: We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/Alq(3): C545T[%]/Alq(3)/LiF/Al, six devices by separating the emitting layer of Alq(3):C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.

Abstract: The continuous increase demand for electric power leads to the additional construction of transmission facilities, but it is not easy to acquire right-of-way for transmission facilities. Therefor, there is a need for compact tower that can be built on a narrow right-of-way. the compact tower with polymer insulation arm is a solution. It can be upgrading conventional 154 kV transmission line voltages to 345 kV levels. However transmission voltage is increasing, environment interference (corona noise, radio interference, etc.) will occur gradually. This environment interference is depending on the electrical clearances of tower and configuration of conductors. Therefore the analysis of the factors of environmental interference is necessary in order to upgrading transmission voltage. This paper presents the design factor of a compact tower to meet the environmental interference standard.

Abstract: This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at 120℃ using single-precursor hexamethyildisilane: Si(2)(CH(3))(6) (HMDS) as Si and C precursors. 0～40 sccm N(2) gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/cm(2), respectively. The thermal and mechanical properties of the N(2) doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of N(2) flow rate. Maximum young`s modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm N(2), respectively.

Abstract: Nanoporous titanium dioxide (TiO(2)) is very attractive material for various applications due to the high surface to volume ratio. In this study, we have fabricated nanoporous TiO(2) thin films on Si by anodic oxidation. 500-nm-thick titanium (Ti) films were deposited on Si by using electron beam evaporation. Nanoporous structures in the Ti films were obtained by anodic oxidization using ethylene glycol electrolytes containing 0.3 wt% NH(4)F and 2 vol% H(2)O under an applied bias of 5 V. The diameter of nanopores in the Ti films linearly increased with anodization time and the whole Ti layer could become nanoporous after anodizing for 3 hours, resulting in vertically aligned nanotubes with the length of 200～ 300 nm and the diameter of 50～80 nm. Upon annealing at 600℃ in air, the anodized Ti films were fully crystallized to TiO(2) of rutile and anatase phases. We believe that our method to fabricate nanoporous TiO(2) films on Si is promising for applications to thin-film gas sensors and thin-film photovoltaics.

Abstract: Carbon aerogels are promising materials as electrodes for electrical double layer capacitors (EDLCs). An optimum process is presented for synthesis of nanoporous carbon aerogels via pyrolyzing resorcinol-formaldehyde (RF) organic aerogels, which could be cost-effectively manufactured from RF wet gels. The major reactions between resorcinol and formaldehyde include an addition reaction to form hydroxymethyl derivatives (-CH(2)OH), and then a condensation reaction of the hydroxymethyl derivatives (-CH(2)-)- and methylene ether (-CH(2)OCH(2)-) bridged compounds. The textural properties of carbon aerogels obtained were characterized by nitrogen adsorption/desorption analysis and SEM and TEM. The application of the resultant carbon for electrodes of electric double layers capacitor (EDLC) in organic TEABF4/ACN electrolyte indicated that the ESR, as low as 55 mΩ, was smaller than for commercially activated carbons. And EDLC with carbon Aerogel electrodes has an excellent stable more than for commercially activated carbons.