Al:ZnO thin films were deposited using the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (002) XRD peak increases with increasing the substrate temperature [1, 2]. The electrical resistivity and optical transmittance of the Al:ZnO thin film were analyzed as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at 400℃, the resistivity decreases to a minimum value of 4.1×10-3 Ωcm and the transmittance increases to a maximum value of 85% of the Al:ZnO thin film.

Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TF1`) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT`s behavior models implemented in SPICE tools, it can be easily added to them.

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SJZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage (Vth) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy (Vo). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a Vib controller, resulting in the enhancement of stability of TFTs,

In this paper, the + 0.005KNhO: ÷ xwt9`o le02 lead-free piezoelectric ceramics for energy harvesting devices were fabricated by the conventiona] mixed oxide method. The microstructure, dielectric, and piezoelectric properties were investigated as a function of the Te09 addition. All the specimens showed an orthorhombic phase structure. At the composition ceramics doped with 0.1 wt%Te02, the optimum values of da 212 pC/N, d33`g33= 9.54 pm2/N, and kp= 0.448 were obtained, respectively. The results indicate that the composition ceramics is a promising candidate for energy harvesting devices applications.

For conventional electrical actuators, the materials are mainly made up of metals, which mean they are prone to corrosion and electrical sparking. Replacing these systems with polymer metal composite based materials can be solved both problems. Considering their excellent clcctromechanical property, low device fabricatioI1 cost, light weight, and go electrical conductivity, the actuator based on ionic polymer metal composite (IPMC) was fabricated using Nafion film, NaOH 0. l molar solution, and Au electrode. IPMCs exhibit good electrostatic property which means they can in principle be used in making actuators based on electromechanical motions. The resistance measurements or Nafion film after soaking in NaOH and deionized water were demonstrated and compared each other. The result of samPle soaked in NaOH showed better ejcal conductivity thall in deionized water. The fabricate匕1 IPMC actuator exhibits a l large deformation of bending dusplacement of approximately 9 mm with applied low AC voltage 6.89 V at 2. 84 Hz. The result of computer simulation was also very similar and shown as a bending displacement of 8. 6085 mm.

In this paper, micro dried bio-potential electrodes are demonstrated for sEMG (surface ElectroMyoGraphic) signal measurement using conductive epoxy on the textile fabric. Micro dried hio-potential electrodes on the textile fabric substrate have several advantages over the conventional wetJdrv electrodes such as good feeling of wearing, possibility of extended-wearing due to the good ventilation. Also these electrodes on the textile fabric can easily apply to the curved skin surface. These electrodes are fabricated by the screen-printing process with the size of 1 mmxl0 mm and the resultant resistance of these electrodes have the average value of 0.4 Q. The conventional silver chloride electrode shows the average value of 0.3 . However, the electrode on the textile fabric are able to measure the sEMG signal without feeling of difference and this electrode shows the lower resistance of 1.03 &than conventional silver chloride electrode with 2.8 Q in the condition of the very sharp curve surface (the radius of curvature is 40 mm).

Mg doped zinc tin oxide (ZTOMg) thin films were prepared on glasses by rf magnetron sputtering. O was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate trdnsparent thin film transistors were fabricated on N Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.

In this Paper, we have developed1 a low temperature process to make two type of Paste by using TIO2 nanoprticles(P25). The interconnections between substrate and TiO2 films or link between particles of free-binder Paste (FP1, FPZ, FP3) is very poor. Therefore, the Titanium(IV) isopropoxide was added to the TP paste to improve the interconnection. Electron transport time (Tt) and recombination time (Tr) are analyzed by IMPS (intensity-modulated photocurrent spectroscopy) and INIVS (Intensity-modulated photovltage spectroscopy). In the results, Tt of TP paste based DSSCs (about 4.3×10-3) is faster than other samples. Tt is Ionger from 2.7×10-2 s of FP2 to 3.0×10-2 s of TP. A solar conversion efficiency (DSSCs) of TP 15 3.54% for an incident solar energy of 100 mw cm-2(meanwhile, 2. 70% for DSSCs With FP2). The c아1versioIl efficiency is increased by 1.3 times.

(Ga203)x(ZnO)100-x, (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the Ga203 content. The GZO film with an atomic ratio of Ga203 of x 7 wt. %, shows the lowest resistivity of 7.5 X 10-4 cm. The GZO films were also prepared at various substrate temperatures from room temperature to 300t, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of 2.8x 10u1 n that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of 300t by using the FTS.

Recently, micro cavity is studied to reduce the optical loss of BLU and OLED. In this paper, we suggest applying micro cavity to photo-luminescent lamp with plasma discharge technology to meet the display applications for a BLU for LCD. The structure of photo-luminescent lamp consists of SUS foil and ITO glass with micro cavity. The op to-elect riccharacteristics of photo-luminescent lamp with micro cavity was evaluated. The brightness of photo-luminescent device was increased over 111 ccVm2 with the adaptation of patterned micro cavity at 30 pm. The 3D optical simulation verified the enhanced light out coupling when micro cavity applied to the device.

Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to 120t. The ITO thin films were crystallized at 50t for Si (001) substrates and at 75t for PET substrate. The I`J`O thin films grown onto PET substrate at 120t were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about 7 x 10 ? cm and a transmittance of about 84% at a wavelength of 550 rim. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.

Numerical analysis on RF (Radio Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by HF thermal plasma. For this puipose, the behaviors of Ni metal particles injected into HF plasma torch were investigated according to their diameters (1 100 pin). RF input power (6~12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of 100 pin can be completely evaporated at relatively low power level of 10 kW during its flight of HF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using HF thermal plasmas.

Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The
objective
of this study is reduction of doping process time with same performance. Emitter diffusion was carried out by using a spin oil doping and a RTP. Rapid thermal diffusion was performed in the temperature range of 700750 for Tm 30s- 15 m. Thermal budgets yielded a 50 2/sq emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by JR lamp was employed in air atmosphere at 700 t for 15 m.

The new recycling technology for aged Aluminum wires in overhead conductor have been carried out. We are attempting to develop remanufacturing method for them for more effective way of recycling in stead of its conventional remelting prorecs. The weld of aged aluminum wires play a vital role in remanufacture process. The paper investigates the mechanical properties during cold welding process of aged Aluminum wire. The tensile tests and microscopic analysis results are discussed to underscore the hardening features of welded aluminum wire. Various graphs are presented accompanied by discussion about their relevance on the process.