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플라즈마내에 존재하는 산소 양이온이 실리콘 산화막의 계면 고정전하와 계면 포획전하 밀도에 미치는 영향

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Effect of positive oxide ions in plasma on interface oxide fixed charge density and interface oxide trap charge density at SiO2 films

Hae Kyung Lee, Seuk Yung Hwang
J Electr Electron Mater 1999;12(11):1073-1081.
Published online: November 1, 1999
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Effect of positive oxide ions in plasma on interface oxide fixed charge density and interface oxide trap charge density at SiO2 films
J Electr Electron Mater. 1999;12(11):1073-1081.   Published online November 1, 1999
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Effect of positive oxide ions in plasma on interface oxide fixed charge density and interface oxide trap charge density at SiO2 films
J Electr Electron Mater. 1999;12(11):1073-1081.   Published online November 1, 1999
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