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반도체 / Ge1-ySny 위에 성장시킨 Ge1-xSnx 또는 Ge 층에서 성장방향과 응력변형 조건에 따른 다이렉트 에너지 간격 특성 연구

박일수, 전상국

Characteristics of direct energy gap of Ge1-xSnx/Ge1-ySny or Ge/Ge1-ySny in the growth direction and strain condition

Ill Soo Park, Sang Kook Chun
J Electr Electron Mater 1999;12(10):835-842.
Published online: October 1, 1999
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Characteristics of direct energy gap of Ge1-xSnx/Ge1-ySny or Ge/Ge1-ySny in the growth direction and strain condition
J Electr Electron Mater. 1999;12(10):835-842.   Published online October 1, 1999
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Characteristics of direct energy gap of Ge1-xSnx/Ge1-ySny or Ge/Ge1-ySny in the growth direction and strain condition
J Electr Electron Mater. 1999;12(10):835-842.   Published online October 1, 1999
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