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반도체 : 원격 SF6 플라즈마 방전을 이용한 GaAs 표면의 불화막 형성 및 그 MIS 특성

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Fluoridation of GaAs Surface using Remote SF6 Plasma Discharge and Its MIS Properties

Kwang Ho Kim
J Electr Electron Mater 1999;12(7):580-585.
Published online: July 1, 1999
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Fluoridation of GaAs Surface using Remote SF6 Plasma Discharge and Its MIS Properties
J Electr Electron Mater. 1999;12(7):580-585.   Published online July 1, 1999
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
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Fluoridation of GaAs Surface using Remote SF6 Plasma Discharge and Its MIS Properties
J Electr Electron Mater. 1999;12(7):580-585.   Published online July 1, 1999
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