Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Deep 서브마이크론 LDD - nMOSFET 의 핫 - 캐리어 현상 억제를 위한 반경험적인 LDD 공정설계에 관한 연구

안태형, 김남훈, 김창일, 서용진, 장의구

A Study on Semi - Empirical LLD Process Design for Suppression of Hot - carrier Effects in Deep Submicron LDD - nMOSFETs

Tae Hyun An, Nam Hoon Kim, Chang Il Kim, Yong Jin Seo, Eui Goo Chang
J Electr Electron Mater 1999;12(3):193-199.
Published online: March 1, 1999
  • 2 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

A Study on Semi - Empirical LLD Process Design for Suppression of Hot - carrier Effects in Deep Submicron LDD - nMOSFETs
J Electr Electron Mater. 1999;12(3):193-199.   Published online March 1, 1999
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
A Study on Semi - Empirical LLD Process Design for Suppression of Hot - carrier Effects in Deep Submicron LDD - nMOSFETs
J Electr Electron Mater. 1999;12(3):193-199.   Published online March 1, 1999
Close