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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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ECR 플라즈마와 습식 식각으로 게이트 리세스한 AlGaAs/InGaAs/GaAs PHEMT 소자의 전기적 특성연구

이철욱, 배인호, 최현태, 이진희, 윤형섭, 박병선, 박철순

A Study of Electrical Properties for AlGaAs/InGaAs/GaAs PHEMT's Recessed by ECR Plasma and Wet Etching

Chul Wook Lee, In Ho Bae, Hyun Tae Choi, Jin Hee Lee, Hyung Sup Yoon, Byung Sun Park, Chul Soon Park
J Electr Electron Mater 1998;11(5):365-370.
Published online: May 1, 1998
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A Study of Electrical Properties for AlGaAs/InGaAs/GaAs PHEMT's Recessed by ECR Plasma and Wet Etching
J Electr Electron Mater. 1998;11(5):365-370.   Published online May 1, 1998
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
A Study of Electrical Properties for AlGaAs/InGaAs/GaAs PHEMT's Recessed by ECR Plasma and Wet Etching
J Electr Electron Mater. 1998;11(5):365-370.   Published online May 1, 1998
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