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GAIVB 법에 의해 형성된 Al2O3 / Si Mos 구조에서의 항복현상에 관한 고찰

성만영, 김천섭

DIELECTRIC BREAKDOWN IN MOS STRUCTURES OF Al2O3 ON Si DEPOSITED BY GAIVB TECHNIQUE

Man Young Sung, Chun Sub Kim
J Electr Electron Mater 1990;3(3):242-252.
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DIELECTRIC BREAKDOWN IN MOS STRUCTURES OF Al2O3 ON Si DEPOSITED BY GAIVB TECHNIQUE
J Electr Electron Mater. 1990;3(3):242-252.
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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DIELECTRIC BREAKDOWN IN MOS STRUCTURES OF Al2O3 ON Si DEPOSITED BY GAIVB TECHNIQUE
J Electr Electron Mater. 1990;3(3):242-252.
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