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ITO/AZO 투명전극을 이용한 Si 기반의 광전소자

장희준, 윤한준, 이경남, 김준동

Si Based Photoelectric Device with ITO/AZO Double Layer

Hee-joon Jang, Han-joon Yoon, Gyeong-nam Lee, Joondong Kim
J Electr Electron Mater 2018;31(2):85-89.
Published online: February 1, 2018
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In this study, functional transparent conducting layers were investigated for Si-based photoelectric applications. Double transparent conductive oxide (TCO) films were deposited on a Si substrate in the sequence of indium tin oxide (ITO) followed by aluminum-doped zinc oxide (AZO). First, we observed that the conductivity and transparency of AZO dominate the overall performance of the double TCO layers. Secondly, the double layered TCO film (consisting of AZO/ITO) deposited by sputtering was compared to a AZO-only film in terms of their optical and electrical properties. We prepared three different AZO films: ITO:3min/AZO:10min, ITO:5min/AZO:7min, and ITO:7min/AZO:4min. The results show that the optical properties (transmittance, absorbance, and reflection) can be controlled by the film composition. This may provide a significant pathway for the manipulation of the optical and electrical properties of photoelectric devices.

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Si Based Photoelectric Device with ITO/AZO Double Layer
J Electr Electron Mater. 2018;31(2):85-89.   Published online February 1, 2018
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Si Based Photoelectric Device with ITO/AZO Double Layer
J Electr Electron Mater. 2018;31(2):85-89.   Published online February 1, 2018
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