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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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MOS 소자 반전층의 전자 이동도에 대한 해석적 모델

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An Analytical Model for Inversion Layer Electron Mobility in MOSFET

Hyung Soon Shin
J Electr Electron Mater 1996;9(2):174-179.
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An Analytical Model for Inversion Layer Electron Mobility in MOSFET
J Electr Electron Mater. 1996;9(2):174-179.
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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An Analytical Model for Inversion Layer Electron Mobility in MOSFET
J Electr Electron Mater. 1996;9(2):174-179.
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