The silicon dioxide (SiO2) was deposited using various gas as oxygen and nitrous oxide (N2O) in nowadays. In order to improve electrical characteristics and the interface state density (D_{it}) in low temperature, It was deposited with carbon dioxide (CO2) and silane (SiH4) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each D_{it} of SiO2 using CO2 and N2O gas was 1.30×1010 cm-2·eV-1 and 3.31×1010 cm-2·eV-1. It showed SiO2 using CO2 gas was about 2.55 times better than N2O gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using SiO2(CO2) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied SiO2(N2O) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show SiO2 using CO2 decrease the D_{it} and it improves the operating voltage.
