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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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기술 교육 : 열처리 방법에 따른 세라믹 박막의 AFM 및 C-F 특성

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Technology Education : AFM and C-F Properties of Ceramic Thin Film with Annealing Method

Woon Shik Choi
J Electr Electron Mater 2015;28(9):598-601.
Published online: September 1, 2015
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The Sr0.7Bi2.3Nb2O9(SBN) thin films are deposited on Pt electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was 300℃. SBN thin films were annealed at 500∼700℃ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature(600℃) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of 0.7 ㎌/㎠was obtained by annealing temperature(700℃). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1∼1,000 kHz.

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Technology Education : AFM and C-F Properties of Ceramic Thin Film with Annealing Method
J Electr Electron Mater. 2015;28(9):598-601.   Published online September 1, 2015
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Technology Education : AFM and C-F Properties of Ceramic Thin Film with Annealing Method
J Electr Electron Mater. 2015;28(9):598-601.   Published online September 1, 2015
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