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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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장시간 스트레스 조건에서 Submicron MOSFET 의 열전자 트래핑에 의한 노화현상에 대한 연구

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A study on the degradation by the hot carrier trapping of the submicron MOSFET with long stress condition

Soon Seuk Hong
J Electr Electron Mater 1995;8(3):357-361.
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A study on the degradation by the hot carrier trapping of the submicron MOSFET with long stress condition
J Electr Electron Mater. 1995;8(3):357-361.
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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A study on the degradation by the hot carrier trapping of the submicron MOSFET with long stress condition
J Electr Electron Mater. 1995;8(3):357-361.
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