We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a SiO2 as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.
