In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about 120℃ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at 120℃ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about 2 x 10-4 n·cm and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.
