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차세대 비휘발성 메모리에 사용되는 High-K 절연막의 터널링 특성

오세만, 정명호, 박군호, 김관수, 정홍배, 이영희, 조원주

Tunneling Properties in High-K Insulators with Engineered Tunnel Barrier for Nonvolatile Memory

Se Man Oh, Myung Ho Jung, Gun Ho Park, Kwan Su Kim, Hong Bay Chung, Young Hie Lee, Won Ju Cho
J Electr Electron Mater 2009;22(6):466-469.
Published online: June 1, 2009
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Tunneling Properties in High-K Insulators with Engineered Tunnel Barrier for Nonvolatile Memory
J Electr Electron Mater. 2009;22(6):466-469.   Published online June 1, 2009
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Tunneling Properties in High-K Insulators with Engineered Tunnel Barrier for Nonvolatile Memory
J Electr Electron Mater. 2009;22(6):466-469.   Published online June 1, 2009
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