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습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구

곽상현, 경신수, 성만영

An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation

Sang Hyeon Kwak, Sin Su Kyoung, Man Young Sung
J Electr Electron Mater 2008;21(11):981-986.
Published online: November 1, 2008
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An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation
J Electr Electron Mater. 2008;21(11):981-986.   Published online November 1, 2008
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation
J Electr Electron Mater. 2008;21(11):981-986.   Published online November 1, 2008
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