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상변화 메모리 응용을 위한 MOCVD 방법을 통한 Ge-Sb-Te 계 박막의 증착 및 구조적인 특성분석

김난영, 김호기, 윤순길

Fabrication and Structural Properties of Ge-Sb-Te Thin Film by MOCVD for PRAM Application

Ran Young Kim, Ho Gi Kim, Soon Gil Yoon
J Electr Electron Mater 2008;21(5):411-414.
Published online: May 1, 2008
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Fabrication and Structural Properties of Ge-Sb-Te Thin Film by MOCVD for PRAM Application
J Electr Electron Mater. 2008;21(5):411-414.   Published online May 1, 2008
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Fabrication and Structural Properties of Ge-Sb-Te Thin Film by MOCVD for PRAM Application
J Electr Electron Mater. 2008;21(5):411-414.   Published online May 1, 2008
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