Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Excimer Laser Annealing 결정화 방법 및 고유전 게이트 절연막을 사용한 poly-Si TFT의 특성

이우현, 조원주

Characteristics of poly-Si TFTs using Excimer Laser Annealing Crystallization and high-k Gate Dielectrics

,
J Electr Electron Mater 2008;21(1):1-4.
Published online: January 1, 2008
  • 11 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Characteristics of poly-Si TFTs using Excimer Laser Annealing Crystallization and high-k Gate Dielectrics
J Electr Electron Mater. 2008;21(1):1-4.   Published online January 1, 2008
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Characteristics of poly-Si TFTs using Excimer Laser Annealing Crystallization and high-k Gate Dielectrics
J Electr Electron Mater. 2008;21(1):1-4.   Published online January 1, 2008
Close