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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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트렌치 게이트 IGBT 에서의 공정 및 설계 파라미터에 따른 항복 전압 특성에 관한 연구

신호현, 이한신, 성만영

A Study on the Breakdown Voltage Characteristics with Process and Design Parameters in Trench Gate IGBT

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J Electr Electron Mater 2007;20(5):403-409.
Published online: May 1, 2007
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A Study on the Breakdown Voltage Characteristics with Process and Design Parameters in Trench Gate IGBT
J Electr Electron Mater. 2007;20(5):403-409.   Published online May 1, 2007
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
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A Study on the Breakdown Voltage Characteristics with Process and Design Parameters in Trench Gate IGBT
J Electr Electron Mater. 2007;20(5):403-409.   Published online May 1, 2007
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