Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화

원창섭, 이명수, 류세환, 한득영, 안형근

Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET

, , , ,
J Electr Electron Mater 2006;19(9):793-799.
Published online: September 1, 2006
  • 4 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET
J Electr Electron Mater. 2006;19(9):793-799.   Published online September 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET
J Electr Electron Mater. 2006;19(9):793-799.   Published online September 1, 2006
Close