A Study of Properties of GaN and LED Grown using In-situ SiN Mask

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In-situ SiN 박막을 이용하여 성장한 GaN 박막 및 LED 소자 특성 연구

김덕규, 유인성, 박춘배

A Study of Properties of GaN and LED Grown using In-situ SiN Mask

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J Electr Electron Mater 2005;18(10):945-949.
Published online: October 1, 2005

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Keywords: SiN mask, Metal organic chemical vapor deposition, MOCVD, (102) FWHM, TD density, Output power

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A Study of Properties of GaN and LED Grown using In-situ SiN Mask

J Electr Electron Mater. 2005;18(10):945-949. Published online October 1, 2005

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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A Study of Properties of GaN and LED Grown using In-situ SiN Mask

J Electr Electron Mater. 2005;18(10):945-949. Published online October 1, 2005

Articles

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In-situ SiN 박막을 이용하여 성장한 GaN 박막 및 LED 소자 특성 연구

A Study of Properties of GaN and LED Grown using In-situ SiN Mask

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