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In-situ SiN 박막을 이용하여 성장한 GaN 박막의 특성 연구

김덕규, 박춘배

A Study of Properties of GaN grown using In-situ SiN Mask by MOCVD

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J Electr Electron Mater 2005;18(6):582-586.
Published online: June 1, 2005
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A Study of Properties of GaN grown using In-situ SiN Mask by MOCVD
J Electr Electron Mater. 2005;18(6):582-586.   Published online June 1, 2005
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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A Study of Properties of GaN grown using In-situ SiN Mask by MOCVD
J Electr Electron Mater. 2005;18(6):582-586.   Published online June 1, 2005
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