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감압화학 증착법으로 성장된 실리콘-게르마늄 반도체 에피층에서 붕소의 이차원 도핑 특성

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Two Dimensional Boron Doping Properties in SiGe Semiconductor Epitaxial Layers Grown by Reduced Pressure Chemical Vapor Deposition

J Electr Electron Mater 2004;17(12):1301-1307.
Published online: December 1, 2004
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Two Dimensional Boron Doping Properties in SiGe Semiconductor Epitaxial Layers Grown by Reduced Pressure Chemical Vapor Deposition
J Electr Electron Mater. 2004;17(12):1301-1307.   Published online December 1, 2004
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Two Dimensional Boron Doping Properties in SiGe Semiconductor Epitaxial Layers Grown by Reduced Pressure Chemical Vapor Deposition
J Electr Electron Mater. 2004;17(12):1301-1307.   Published online December 1, 2004
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