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플라즈마 에칭으로 손상된 4H-실리콘 카바이드 기판 위에 제작된 MOS 커패시터의 전기적 특성

조남규, 구상모, 우용득, 이상권

Electrical Characterization of MOS (metal-oxide-semiconductor) Capacitors on Plasma Etch-damaged 4H-Silicon Carbide

Nam Gyu Jo, Sang Mo Gu, Yong Deug U, Sang Gwon Lee
J Electr Electron Mater 2004;17(4):373-377.
Published online: April 1, 2004
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Electrical Characterization of MOS (metal-oxide-semiconductor) Capacitors on Plasma Etch-damaged 4H-Silicon Carbide
J Electr Electron Mater. 2004;17(4):373-377.   Published online April 1, 2004
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Electrical Characterization of MOS (metal-oxide-semiconductor) Capacitors on Plasma Etch-damaged 4H-Silicon Carbide
J Electr Electron Mater. 2004;17(4):373-377.   Published online April 1, 2004
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