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자기 정열과 수소 어닐링 기술을 이용한 고밀도 트랜치 게이트 전력 DMOSFET의 전기적 특성 분석

박훈수, 김종대, 김상기, 이영기

Analysis of Electrical Characteristics of High-Density Trench Gate Power DMOSFET Utilizing Self-Align and Hydrogen Annealing Techniques

Hun Su Park, Jong Dae Kim, Sang Gi Kim, Yeong Gi Lee
J Electr Electron Mater 2003;16(10):853-858.
Published online: October 1, 2003
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Analysis of Electrical Characteristics of High-Density Trench Gate Power DMOSFET Utilizing Self-Align and Hydrogen Annealing Techniques
J Electr Electron Mater. 2003;16(10):853-858.   Published online October 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Analysis of Electrical Characteristics of High-Density Trench Gate Power DMOSFET Utilizing Self-Align and Hydrogen Annealing Techniques
J Electr Electron Mater. 2003;16(10):853-858.   Published online October 1, 2003
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