Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

비휘발성 메모리 소자응용을 위한 과잉 Bi 첨가에 따른 BLT 박막의 강유전 특성

김경태, 김창일, 강동희, 심일운

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Excess Bi Contents for Non - Volatile Memory Device Application

Kyoung Tae Kim, Chang Il Kim, Dong Hee Kang, Il Wun Shim
J Electr Electron Mater 2002;15(9):764-769.
Published online: September 1, 2002
  • 5 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Excess Bi Contents for Non - Volatile Memory Device Application
J Electr Electron Mater. 2002;15(9):764-769.   Published online September 1, 2002
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Excess Bi Contents for Non - Volatile Memory Device Application
J Electr Electron Mater. 2002;15(9):764-769.   Published online September 1, 2002
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.