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저압 MOCVD 로 CBr4 가스를 사용하여 탄소도핑된 GaAs 에피층의 결정학적 방향에 따른 전기적 성질의 의존성

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Crystallographic Orientation Dependence of Electrical Properties of Carbon - doped GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using CBr4

Chang Sik Son
J Electr Electron Mater 2002;15(3):214-219.
Published online: March 1, 2002
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Crystallographic Orientation Dependence of Electrical Properties of Carbon - doped GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using CBr4
J Electr Electron Mater. 2002;15(3):214-219.   Published online March 1, 2002
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Crystallographic Orientation Dependence of Electrical Properties of Carbon - doped GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using CBr4
J Electr Electron Mater. 2002;15(3):214-219.   Published online March 1, 2002
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