Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

반도체 / 13-2-7 / 실리콘 웨이퍼위에 증착된 실리케이트 산화막의 CMP 슬러리 오염 특성

김상용, 서용진, 이우선, 장의구

CMP Slurry Induction Properties of Silicate Oxides Deposited on Silicon Wafer

Sang Yong Kim, Yong Jin Seo, Woo Sun Lee, Eui Goo Jang
J Electr Electron Mater 2000;13(2):131-136.
Published online: February 1, 2000
  • 3 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

CMP Slurry Induction Properties of Silicate Oxides Deposited on Silicon Wafer
J Electr Electron Mater. 2000;13(2):131-136.   Published online February 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
CMP Slurry Induction Properties of Silicate Oxides Deposited on Silicon Wafer
J Electr Electron Mater. 2000;13(2):131-136.   Published online February 1, 2000
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.