Single-layer graphene is grown directly on Ti-buffered SiO₂ at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

In this study, we propose Ti hole pattern structure on the transparent conductive oxide (TCO) lessdye-sensitized solar cells (DSSCs) using the lift-off process to improve the low light transmittance and lowefficiency caused by opaque Ti electrode. The formation of Ti hole patterns make it possible to move the dyeadsorption and electrolyte. The DSSCs with Ti hole patterns showed a higher photoelectric conversion efficiency(PCE) than those with general structure by 11.1%. As a result, The Ti hole pattern structure can be improved toincrease the light absorption of the dyes and PCE of the TCO-less DSSCs is also increased.