In this study, we investigated the effect of electrode pattern design on the thermal shock resistance and temperature uniformity of a ceramic heater. A cordierite substrate with a low thermal expansion coefficient was fabricated by tape casting, and a tungsten electrode was printed and used as a heating element. The temperature distribution of the ceramic heater was calculated by a finite-element method (FEM) by considering various electrode patterns, and the tensile stress distribution due to the thermal stress was calculated. In the electrode pattern with a single-line width, the central part of the ceramic heater was heated to the maximum temperature, and the position of the ceramic heater having a double-line width was changed to the maximum temperature, depending on the position of the minimum line width pattern. The highest tensile stress was found along the edges of the ceramic heater. The temperature gradient at the edge determined the tensile stress intensity. The smallest tensile stress was observed for electrode pattern D, which was expected to be advantageous in resisting thermal shock failures in ceramic heaters.

Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.

This paper describes the development of a piezoelectric level switch, which aims to effectively monitor the level status in high ambient temperatures. In order to adjust the impedance near the resonant frequency and temperature characteristics, the effect of the case and backing layer materials on its performance was analyzed using the finite element method (FEM). The suggested prototype new level switch has three heat-sink plates attached to SUS bar of 230 mm long, and case of PEEK which contains PZT sensing part. To illustrate the validity of this level switch, 10 samples are prepared and investigated the sensing performance through the high and low temperature ambient.

An operation temperature of Pb(Zr,Ti)O3 based piezoelectric ultrasonic flowmeter was generally restricted to below 200˚C due to a low depoling temperature of its ceramic material. Thus, a new designed piezoelectric ultrasonic flowmeter was fabricated in order to protect from the extremely hot fluid. Its structure is optimized by a finite element method to effectively stop heat flowing along a waveguide. Various materials such as Cu, Al, SUS were examined as a multi-plate radiation shield to enhance the performance of piezoelectric ultrasonic flowmeter. The SUS was evaluated as the most effective material to enhance the performance of piezoelectric ultrasonic flowmeter. As the number of plates of the radiation shield increased, the temperature at piezoelectric transducer away from the hot fluid was constantly decreased with a ratio of 3.12˚C per the plate number.