Lead-free (Bi_1/2Na_1/2)TiO₃ (BNT)-based incipient piezoelectrics are highly promising for high strain actuators, but the high electric fields (4 ~ 6 kV/mm) required for activation limit practical device integration. In the current literature, large strains are frequently attributed to local structural variations like microscopic core-shell architectures. This work systematically investigates an alternative pathway by introducing A-site Strontium (Sr) excess non-stoichiometry into 0.74(Bi_1/2Na_1/2)TiO₃‒0.26SrTiO₃ (BNST26) ceramics. Microstructural and X-ray diffraction analyses reveal highly dense, uniform matrices completely devoid of micro-scale core-shell boundaries or macroscopic symmetry distortions, revealing that Sr non-stoichiometry diverges from typical Bi-excess mechanisms. Interestingly, despite negligible variations in overall macro-scale strain behavior across the composition series, a peak normalized strain (S_max/E_max) of approximately 804 pm/V is achieved at a low driving field of 2 kV/mm for the 1 mol% Sr-excess specimen (x = 0.010). These results indicate that while Sr non-stoichiometry weakly influences nanoscale stability, it can be inferred that subtle modifications of local defect configurations optimize switching energy barriers, enabling high-strain, low-drive-field performance in lead-free relaxors.

In line with the development of electronic devices and technologies, the demand for improving ferroelectric materials’ performance is increasing. Since K_0.5Na_0.5NbO₃ (KNN), an eco-friendly ferroelectric material that does not use lead and has a high Curie temperature, it is attracting attention to its usability as a high-temperature dielectric, and various studies are being conducted to increase performance. In a KNN having a perovskite structure, there was a simulation result that the KNN has higher spontaneous polarization when the A-site in which sodium ions exist is replaced with lithium ions. If the simulation results can be proven experimentally, the application range of KNN-based ferroelectric materials will increase. To this end, we tried to manufacture a K_1-xLi_xNbO₃ (KLN) with high electrical characteristics by fabricating niobium-deficient and potassium-excessive compositions, which attempt was made to solve the stoichiometry problem by volatilization and suppress secondary phases. If KLN’s secondary phase suppression and relative permittivity improvement are successful, it will contribute to meeting the demand for developing electronic devices.

Citations

• Recent Progress in Relaxor-State Design of BNT-Based Ceramics for High-Efficiency Energy-Storage Capacitors
  Yeseul Lim, Geon-Tae Hwang
  Journal of Electrical and Electronic Materials.2026; 39(3): 225.     CrossRef

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a- Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.