The 0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr0.5Ti0.5)O3 (0.2PZN-0.8PZT) ceramic system exhibits excellent piezoelectric properties; however, its high sintering temperature (~1,250°C) causes severe PbO volatilization, increases processing cost, and limits co-firing with low-melting-point electrodes in multilayer devices. In this study, LiBiO2 was introduced as a sintering aid to enable lowtemperature densification of 0.2PZN–0.8PZT ceramics. The optimal composition of x = 0.3 mol% sintered at 1,050°C achieved d33 = 367 pC/N, kp = 0.54, and εT33/ε0 = 1,643. The Curie temperature was also enhanced to 347.8°C, compared with 297.2°C for the reference specimen sintered at 1,250°C. These results demonstrate that LiBiO2 addition enables a 200°C reduction in sintering temperature while maintaining piezoelectric performance and improving thermal stability.
In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiOx was uniformly coated on the surface of cBN powder particles. The obtained TiOx-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N2-5%H2 mixed gas. With increasing temperature, the chemical composition of the TiOx coating layer changed in the order of TiO2→Ti6O11→Ti4O7→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.
This paper presents the design and fabrication of a high power piezoelectric ultrasonic surgery unit for multi-purpose dental implantation. A conventional piezoelectric ultrasonic surgery units consists of a transducer and a tip. However, the drawback of this simple structure is that the output performance of the transducer considerably changes with the change of the tips. An ultrasonic surgery unit that has an additional booster between the transducer and the tip can solve this problem to some extent; for this, an optimal structural design for the transducer is required. We used the Bolted Langevin Transducer (BLT) as the basic transducer; it consists of piezoelectric ceramics and a metal body. It`s structure was optimized using mathematical methods to determine the length and radius of the tail and head masses. Additionally, the booster was also subjected to the same methods. Using these mathematical methods, optimal results in terms of the resonance frequency (24.96 kHz), displacement (14.27 ㎛), and pressure (2.8 MPa), could be obtained. The validity of this proposed surgery unit was confirmed experimentally, exhibiting a cutting force of around 7% higher than that of a conventional surgery unit.
We demonstrated that self-separation FS-GaN (freestanding-GaN) was grown on MELO (maskless epitaxially lateral overgrowth) GaN template by horizontal HVPE (hydride vapor phase epitaxy). Before thick GaN grwoth, MELO GaN template was grown on patterned GaN template by MOCVD (metal organic chemical vapor deposition). The laterally overgrown GaN would consist of a continuous well coalesced layer. The mixed TDD (threading dislocation density) of seed and wing region were 8 × 108 cm-2 and 7 × 107 cm-2, respectively. After thick GaN grown by HVPE, the self-separation between thick GaN and sapphire substrate was generated at seed region. The regions of self-separation for FS-GaN and sapphire were observed by FE-SEM. Moreover, Raman results indicated that the compressive strain of seed and wing regions at FS-GaN substrate were slightly released compared to that of thick GaN grown on conventional GaN template. The optical properties of the FS-GaN substrate were examined by using PL (photoluminescence). The PL exhibited that donor bound exciton and donor acceptor pair were observed at low temperature. The effects on optical and structural properties of FS-GaN substrate have been discussed in detail.
In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ω-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.
In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.
This paper describes the development of a piezoelectric level switch, which aims to effectively monitor the level status in high ambient temperatures. In order to adjust the impedance near the resonant frequency and temperature characteristics, the effect of the case and backing layer materials on its performance was analyzed using the finite element method (FEM). The suggested prototype new level switch has three heat-sink plates attached to SUS bar of 230 mm long, and case of PEEK which contains PZT sensing part. To illustrate the validity of this level switch, 10 samples are prepared and investigated the sensing performance through the high and low temperature ambient.
Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25∼75% N2/Aratmosphere. The as-deposited AlN films at 25∼50% N2/Ar showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the N2/Ar ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our N2 concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20∼80 mV in 1∼10MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.
This paper describes the development of a piezoelectric flextensional transducer, which aims toeffectively degrade the TCE contained in aqueous solution. In order to adjust the 1st flextensionalresonant frequency and output displacement of the flextensional transducer, the effect of the geometricalvariations on performance was analyzed using the finite element analysis (FEM). The results indicatedthat the effect of external shell`s thickness and curvature were most significant, and experimentalfabrication and characterization of a transducer was performed to confirm the results. To prove the capacity to degrade the TCE contained in aqueous solution, 50 and 100 ppm of TCE were prepared in sealed chamber, and investigated the removal rate of TCE through the time and initial concentration.
3 mol% Co-added Ni(OH)2 fine powders, which showed β-phase, as positive electrode materials have been fabricated using NiSO4；6H2O aqueous solution by ultrasonic spray-chemical precipitation and subsequent hydrothermal method, and sheet-like Ni nanopowder was fabricated by mechano-chemical reduction method. The addition effects of the sheet-like Ni nanopowder on the electrochemical properties of the positive electrode in Ni-Zn Redox flow battery were investigated. Impedance spectroscopy revealed that the addition of the sheet-like Ni nanopowder resulted in decrease in the electrical resistivity; 10 wt.% addition reduced the electrical properties by a fifth. Cyclic voltammetry showed the addition of the sheet-like Ni nanopowder resulted in decrease in the potential difference of oxidation and reduction; this means the increase in the reversability for electrode reduction. Charge/discharge measurement confirmed that the addition of the sheet-like Ni nanopowder resulted in the increase in the discharge efficiency.
In this study we aims to examine the effects of Co3O4 and NiO doping on the defects and electrical properties in ZnO-Bi2O3-Sb2O3 (Sb/Bi=0.5) varistors. It seemed to form □(0.20 eV) and □(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only □appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5∼4.5 nF) and resistance (0.3∼9.5 kΩ). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, α= 36 and 29, relatively) in ZBS. The various parameters (Nd= 1.43∼2.33×1017 cm-3, Nt=1.40∼ 2.28×1012 cm-2, Φb= 1.76∼2.37 V, W= 98∼118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.
Citations
Citations to this article as recorded by
Defect-controlled charge transport and switching in PLD-grown Zn0.90Ni0.10O MIS capacitors for non-volatile memory applications Sunena Subhash, Sudheendran Kooriyattil, T.S. Akhil Raman, S. Shyam Shankar, K.C. James Raju Physica B: Condensed Matter.2026; 739: 418941. CrossRef
A piezoelectric ultrasonic bone surgical instrument, usually used to remove the tartar out of teeth or to cut the dentine of the tooth, is a recently popular instrument for dental treatment due to its several merits such as small size, low-electric power and precision control of surgical operation. It has typically two parts of a tip and vibration system which is also composed of head, piezoelectric elements and tail-mass. In order to improve the performance of the instrument, it is important to standardize the size of the vibration system without tip for high performance. In this study, a Finite Element Analysis (FEA) was utilized to optimize the structure of ultrasonic instrument in vibration system. Consequently, this study revealed that influence of several tips on property were minimized and it showed good property at the frequency range of 22∼32 kHz.
Citations
Citations to this article as recorded by
A Study on Temperature Changes during Bone Scaling and Cutting of Dental Ultrasonic Scaling/Surgery System Min-Woo Sa, Tae-Jo Ko, Jong Young Kim Journal of the Korean Society of Manufacturing Process Engineers.2020; 19(2): 1. CrossRef
A comparative study on the user satisfaction between two different piezoelectric engines Hyun-Mi Lim, Kyu-Bok Lee, Wan-Sun Lee, So-Young Choi Journal of Dental Rehabilitation and Applied Science.2017; 33(4): 269. CrossRef
Development of Handpiece Moving System (HMS) for Cutting Performance Evaluation of Dental Ultrasonic Surgery Unit Min-Woo Sa, Hae-Ri Shim, Tae-Jo Ko, Jong-Min Lee, Jong Young Kim Journal of the Korean Society for Precision Engineering.2016; 33(5): 377. CrossRef
Evaluation and Design of Ultrasonic Vibrator for Dental Surgery Ki-Moon Park, Jung-Hyun Kim, Tae Jo Ko Journal of the Korean Society of Manufacturing Process Engineers.2016; 15(3): 102. CrossRef
In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-Bi2O3 (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of Zn ·· (0.17∼0.18 eV) and V· (0.30∼0.33 eV). From J-E characteristics the nonlinear coefficient (α) and resistivity (ρgb) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 GΩcm with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) (ZnO-Bi2O3-Mn3O4-Co3O4) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (α-factor= 0.136).
In this study we aims to examine the co-doping effects of 1/3 mol% Mn3O4+Co3O4 (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of ZnO-Bi2O3-Sb2O3 (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore (Zn2Bi3Sb3O14) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (α- or β-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in Sb/Bi≥1.0. In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, α=30∼49), and seemed to form (0.17 eV) and (0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to ZnO/Bi2O3(Mn,Co)/ZnO (0.47 eV) and the other ZnO/ZnO (0.80∼0.89 eV) homojunctions.
A road energy harvester was designed and fabricated to convert mechanical energy from the vehicle load to electrical energy. The road energy harvester is composed of 16 piezoelectric cantilevers. We fabricated prototypes using a vehicle load transfer mechanism. Applying a vehicle load transfer mechanism rather than directly installing energy harvesters under roads decreases the area of road construction and allows more energy harvesters to be installed on the side of the road. The power generation amount with respect to the vehicular velocity change was assessed by installing the vehicle load transfer mechanism form and underground form. The energy harvester installed in the underground form generated power of 4.52mJ at the vehicular velocity of 50 km/h. Also, power generation of the energy harvester installed in the vehicle load transfer mechanism form was 48.65mJ at the vehicular velocity of 50 km/h.
Spring supported piezoelectric cantilever structures (SPCS) were fabricated for vibration-based energy harvester application. We selected four elastic springs (A, B, C, and D type) as cantilever`s supporter, each elastic spring has a different spring constant (S). The C type of SPCS (SC: 4,649 N/m) showed a extremely low resonance frequency of 81 Hz along with the highest power output of 38.5 mW while the A type of SPCS (SA: 40,629 N/m) didn`t show a resonance frequency while. Therefore, it is considered that the lower spring constant lead to a lower resonance frequency of the SPCS. In addition, a tip mass (18 g) at one end of the SPCS could further reduce the resonance frequency without heavy degradation of power output.
Citations
Citations to this article as recorded by
Feasibility study for the self powered wireless emergency call button using electromagnetic energy harvesting mechanism Il-Jung Kim, Yeon-Suk Choi Journal of the Korea Safety Management and Science.2014; 16(2): 111. CrossRef
A Study on the Characteristic of Energy Harvesting Mechanism for Batteryless Wireless Switch Yeon-Suk Choi Journal of the Korea Academia-Industrial cooperation Society.2014; 15(5): 3114. CrossRef
An operation temperature of Pb(Zr,Ti)O3 based piezoelectric ultrasonic flowmeter was generally restricted to below 200˚C due to a low depoling temperature of its ceramic material. Thus, a new designed piezoelectric ultrasonic flowmeter was fabricated in order to protect from the extremely hot fluid. Its structure is optimized by a finite element method to effectively stop heat flowing along a waveguide. Various materials such as Cu, Al, SUS were examined as a multi-plate radiation shield to enhance the performance of piezoelectric ultrasonic flowmeter. The SUS was evaluated as the most effective material to enhance the performance of piezoelectric ultrasonic flowmeter. As the number of plates of the radiation shield increased, the temperature at piezoelectric transducer away from the hot fluid was constantly decreased with a ratio of 3.12˚C per the plate number.
Citations
Citations to this article as recorded by
Electrochemical analysis on SnSeO3/ZnSeO3 nanocomposite N. G. Basil Ralph, S. Shanmugha Soundare, D. Yamuna, S. Ariponnammal Chalcogenide Letters.2024; 21(9): 729. CrossRef
ZnO nanostructures were developed on a Si (100) substrate from powder mixture of ZnO and 5 mol% Pd (ZP-5) as reactants by × sccm oxygen pressures(x= 0, 10, 20, 40). DTA (differential thermal analysis) result shows the Pd(5 mol%)+ZnO mixtured powder(PZ-5) is easily evaporated than pure ZnO powder. The PZ-5 mixtured powder was characterized by DTA to determine the thermal decomposition which was found to be at 800℃, 1,100℃. Weight loss(%) and ICP (inductively coupled plasma) analysis reveal that Zn vaporization is decreased by increased oxygen pressures from the PZ-5 at 1,100℃ for 30 mins. Needle-like ZnO nanostructures array developed from 10 sccm oxygen pressure, was well aligned vertically on the Si substrate at 1,100℃ for 30 mins. The lengths of the Needle-like ZnO nanostructures is about 2 μm with diameters of about 65 nm. The developed ZnO nanostructures exhibited growth direction along [001] with defect-free high crystallinity. It is considered that Zn vaporization is responsible for the growth of Needle-like ZnO nanostructures by controlling the oxygen pressures. The photoluminescence spectra of ZnO nanostructures exhibited stronger 376.7 nm NBE (near band-edge emission) peak and 529.3 nm DLE (deep level energy) peak.
0.935BaTiO3-0.065(Bi0.5Na0.5)TiO3+xmol%MnO2 (BBNTM-x) ceramics with 0≤x≤0.05 were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of Bi3+ ion. Especially, enhanced PTCR characteristics of the extremely low ρRT of 99 Ω·㎝, PTCR jump of 5.1×10(3), α of 15.5%/℃ and high TC of 167℃ were achieved for the BBNTM-0.04 ceramics.
Piezoelectric energy harvester (PEH) as a box type was fabricated in order to harvest mechanical energy imparted to roadways from passing vehicles and convert it into electricity. The PEH was composed of 72 piezoelectric cantilevers with 9 springs with elasticity stick to a bottom of the PEH. For the single piezoelectric cantilever, when a single push with approximately 5 mm displacement was incident to it, power of 0.355 mW was produced at 100 kΩ. It is found that the power from the single piezoelectric cantilever increases when spring constant is high. We investigated power of PEH when the moving vehicle passes in it. Power was increased with increasing vehicle speed. When vehicle speed is 30 km/h, power is 20.6 mW.
Citations
Citations to this article as recorded by
Modeling and Simulation of Triangle Cantilever Piezoelectric Vibrator Yong Chao Chen, Min Gao, Wei Bo Yu, Lei Zhang Applied Mechanics and Materials.2013; 347-350: 1616. CrossRef
Pedestrian walking characteristics at stairs according to width change for application of piezoelectric energy harvesting Mi-hui Yi, Wook-jung Na, Won-hwa Hong, Gyu-yeob Jeon Journal of Central South University.2012; 19(3): 764. CrossRef
The osseointegration of dental implant is influenced by many factors such as surface geometry, loading and the amount of bone. Thus, stability of the dental implant should be checked periodically. In order to test the stability of dental implant by using resonance frequency analysis, we designed a structure of transducers and fabricated a piezoelectric devices. Using finite element analysis, the thickness and length of piezoelectric device and transducers were tailorized and the optimized frequency of 10 kHz was obtained. The resonance frequency from simulation analysis and evaluation was estimated to be similar as 10 kHz. The osseointegration was further enhanced with increasing frequency from the evaluation result of the finite element analysis.
(1-x)BaTiO3-x(Bi0.5Na0.5)TiO3 (0.01≤x≤0.10) ceramics were fabricated with muffled sintering by a modified synthesis process. Their positive temperature coefficient of resistivity (PTCR) characteristics were investigated systematically. All specimen showed a perovskite structure with a tetragonal symmetry. Both the lattice parameter of a and c axes were slightly decreased with increasing (Bi0.5Na0.5)TiO3 (BNT) content. Grain growth was achieved when the incorporated BNT was increased to 6 mol% and the inhibition of grain growth is considered to be due to the appearance of Ba vacancy (V"(Ba)) in the (1-x)BaTiO3-x(Bi0.5Na0.5)TiO3 (0.08≤x). With 4 mol% BNT addition, room temperature resistivity decreased to 48 Ω·㎝ and a resistivity jump (ρmax/ρmin) was as high as 1.1×10(4), respectively. Curie temperature was also increased to 171˚C with increasing BNT content.
First
Prev
