An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

The needle electrode is inserted into the cross-linked polyethylene(XLPE) which is the ultrahigh voltage cable for electric power. By changing the tilt of the needle electrode, we investigated how the void and the thickness of the insulating layer influence the partial discharge(PD) characteristics and the insulating breakdown. In order to investigate the PD characteristics, The XLPE cable was used to the specimens and the tungsten electrode was used with the needle electrode. And the inner semi-conductive layer material of XLPE cable was used with the negative electrode by bonding with the use of conduction tape. The size of the specimens was manufactured to be 16×40×30 [㎣]. We confirmed the effect on changing the PD characteristics according to the changing voltage and the tilt of the electrode after applying the voltage on the electrode from 1[kV] to 40[kV] at room temperature. In the PD characteristics, it was confirmed that the PD current of air void specimens with tilt was unstable more than that of no void specimens with tilt. It was also confirmed that the breakdown voltage was decreased because the effect of air void is more active than the change of the needle electrode tilt in the specimen with air void inside the insulation.