Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

An irradiator is developed using two UVA wavelength ranges of SMD LEDs as a curing light source. This module has dimensions of 545×111×300 mm³ and is equipped with a TIR bar-shaped lens made of PDMS silicone resin. The developed irradiator offers high uniformity, with 89% in the centerline of the horizontal axis direction, for two different wavelength ranges of 365 nm and 385 nm. The radiation intensity from the light source module shows highly directional characteristics, and the irradiator provides a maximum irradiance of 1,634 mW/cm² at a working distance of 50 mm. During the initial 5 minutes of operation, the irradiance experiences a rapid decrease. However, this issue is addressed by optimizing the LED’s current reduction characteristics and managing the Transistor’s temperature rise in the constant current circuit. After continuous operation for approximately 60 minutes. The highest temperature, near the central part of the irradiating surface, reaches 69.7℃, while the lowest temperature, near the edges, is 41.1℃.

We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

A high directivity TIR (total internal reflection) lens in the UV-A region was designed using a silicone resin, and a UV light source module with a maximum irradiation density of 150 mW/cm² was fabricated. The beam angle of the TIR lens was designed to be 8.04° and the maximum diameter of the TIR lens was ø13.5. A silicone resin having a UV transmittance of 93% and a refractive index of 1.4 at a wavelength of 365 nm was used, and the lens was manufactured using an aluminum mold, from which silicone could be easily released. The module was fabricated in a metal printed circuit board of COB (chip on board) type using a 0.75×0.75 mm² UV chip. A jig was used to adjust the focal length between lens and chip and to fix the position of the lens. The optical characteristics such as illumination distributions of the lens and module were designed using ‘LightTools’ optical simulation software. The heat dissipation system was designed to use a forced-air cooling method using a heat-sink and fan.

ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.

The humans are under attack involving the hazardous environment and pathogen/biotoxin aerosol that is realistic concerned. A portable, fast, reliable, and cheap Pathogen and Biotoxin Aerosol threat Detection(PBAD) trigger is an important technology for detect-to-protect and detect-to-treat system because the man-made biological terror is a fast and lethal infection. The ultraviolet C(UVC) wavelengths light source is key issue for PBAD that is sensitive because of strong fluorescence cross section from fluorescent amino acids in proteins such as tryptophan and tyrosine. The UVC-light emitting diode(LED) is emerging light source technology as alternative to laser or lamps as they offer several advantages. This paper discussed about the design consideration of UVC-LED for the PBAD system. The UVC-LED and PBAD technology, currently available or in development, are also discussed.