Ultraviolet (UV) photodetectors are used in various industries and fields of research, including optical communication, flame sensing, missile plume detection, astronomical studies, biological sensors, and environmental research. However, general UV detectors that employ Schottky junction diodes and p^-n junctions have high fabrication cost and low quantum efficiency. In this study, we investigated the characteristics of materials used to manufacture UV photodetectors in a low-cost solution process that requires easy fabrication of flexible substrates. We fabricated p-type NiO and n-type ZnO substrates with wide band gap by the sol^-gel method and compared the characteristics of substrates prepared under different spin-coating and heat-treatment conditions.

The amount of electrical energy has been increased with the rapid development of the industrial society. Accordingly, operating voltage of the power equipment and facility capacity are continuously increasing. Development trends of recent high-voltage electrical equipment are ultra high-voltage, large-capacity and compact. Early diagnosis of a failure of the power plant has been emerging as an important task as to supply high quality power to users. In this study, we have tried to develope an algorithm for distinguishing an arc fault signal generated in the power plant by using UV sensor.