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"Tunability"

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"Tunability"

Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications
Min-su Kwon, Sung-gap Lee, Kyeong-min Kim, Sam-haeng Lee, Young-gon Kim
J Electr Electron Mater 2018;31(6):403-407.   Published online September 1, 2018
In this study, double layer KTN/STO thin films were fabricated on Pt/Ti/SiO2/Si substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.
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Annealing Effect and Tunability of BaZr0.08Ti0.92O3 Polycrystal Grown in N2 Gas Atmosphere by Floating Zone Technique
J Electr Electron Mater 2004;17(11):1178-1185.   Published online November 1, 2004
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Structural and Dielectric Properties of BSCT Thick Films with Various Sintering Temperature
Sung Gap Lee, Young Hie Lee, Sang Heon Lee
J Electr Electron Mater 2003;16(4):304-310.   Published online April 1, 2003
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