Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials Ag(Ta,Nb)O3 thick film. In this study, we have fabricated the Ag(Ta,Nb)O3 thick film on the Al2O3 substrates by screen printing method. The Ag(Ta,Nb)O3 thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150℃, 2 hr. The electrical properties of Ag(Ta,Nb)O3 thick film were investigated at 30∼100℃.

As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Recently, rapid progress has been made in the field of DSSC (dye sensitized solar cell)area. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. In this paper, we will prepare ZnO thick films on the PET substrates for the electrode applications. We will investigate the structural and microstructure properties through the XRD, and SEM analysis, respectively. Also, we will study the electrical of specimens to apply the conducting electrode.