The performance of devices has been improved with fine processes from planar to three-dimensional transistors (e.g., FinFET, NWFET, and MBCFET). There are some problems such as a short channel effect or a self-heating effect occur due to the reduction of the gate-channel length by miniaturization. To solve these problems, we compare and analyze the electrical and thermal characteristics of FinFET and GAAFET devices that are currently used and expected to be further developed in the future. In addition, the optimal structure according to the Fin shape was investigated. GAAFET is a suitable device for use in a smaller scale process than the currently used, because it shows superior electrical and thermal resistance characteristics compared to FinFET. Since there are pros and cons in process difficulty and device characteristics depending on the channel formation structure of GAAFET, we expect a mass-production of fine processes over 5 nm through structural optimization is feasible.

Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO2 and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.

The object of this study is to obtain the optimum mix proportion of halogen free compound with flame resistance and, for the purpose, thermal/electrical characteristics test are conducted using compatibilizing agents, flame resistance agents, hydroxide aluminum, sunscreen, antioxidant and silicon oil on the base resin of linear low density polyethylene (LLDPE), Ethylene vinyl acetate copolymer (EVA). Existing compound method accompanies many requirements to be satisfied including a lot of addition of flame resistance agents, prohibition of impact on mixing capability with base and property and etc. In this study, different from the existing method, the optimum mix proportionis determined and experimented by adding nano clay. Oxygen index test shows no difference between specimens whileT-6, T-9 shows oxygen index of 29[%] and 26[%], respectively. This is concluded that hydroxide aluminum, which is aflame resistance agent, leads low oxygen index. From UL94-V vertical flame resistance test, the combustion behavior is determined as V-0, Fail based on UL94-V decision criteria. Viscometry shows low measurements in specimens with separate addition of compatibilizing agents or nano clay. Volume resistivity test shows low measurement mainly in specimens without compatibilizing agents. Therefore, with the flame resistance compound shows better performance for thermal/electrical property and the optimum mix proportion are achieved among many existing materials.

Because of the development of LED technology, products due to high output and compact, thematerial with high thermal conductivity has been developed. Now that heat radiating part of the LEDlamp is currently used for die casting of aluminum. The development of aluminum with excellent thermalconductivity is required. In this study, we measured the thermal properties and compared them while weproduced the alloy by changing the component of die casting aluminum. From this study, the thermalconductivity and thermal resistance of the developed alloy were superior to die casting aluminum.

In this study, the heat transfer capability have been improved by using via-holes in FR4 PCB, when the LED lighting is designed to solve the thermal problem. The thermal resistance and junction temperature were measured by changing the dimension of FR4 PCB and size of via hole. As a result, when the dimension was increased initially, the thermal resistance and junction temperature was decreased rapidly, the ones was stabilized after the dimension of 200 [mm2]. Also, the light output was improved up to maximum 17% by formation of via-hole and expansion of dimension in FR4 PCB. Therefore, the thermal resistance and junction temperature could be improved by expansion of PCB dimension and configuration of via-hole ability.