This research explores the development of [100]-textured barium titanate (BaTiO₃, BT) ceramics using sodium bismuth titanate (Na_0.5Bi_4.5Ti₄O₁₅, NBiT) templates, aimed at leveraging the inherent high dielectric property of BT. However, the attempted texturing was unsuccessful, primarily due to bismuth diffusion from the NBiT templates into the BT matrix below the sintering temperature, at 1,000℃. Systematical exploration about the cause of the failure is involved and alternative approaches are proposed in detail to overcome the challenge. These findings contribute to the understanding of techniques and conditions for textured ceramic fabrication and highlight the need for further research in this area.

Multilayered actuators using Pb(Mg_1/3Nb_2/3)O₃-Pb(In_1/2Nb_1/2)O₃-PbTiO₃ (PMN-PIN-PT) crystals have demonstrated excellent properties, but are costly and lack mechanical strength. Textured PMN-PIN-PT ceramics exhibit robust mechanical strength and comparable properties to their single crystals form. However, the development of multilayered actuators using textured PMN-PIN-PT ceramics has not been achieved until now. This study presents the development of a multilayered actuator using textured 0.37PMN-0.29PIN-0.34PT ceramics with an Ag0.9/Pd0.1 inner electrode, co-fired at 950℃. A random 0.37PMN- 0.29PIN-0.34PT ceramics multilayered actuator was also developed for comparison. The multilayered actuator consisted of 9 ceramic layers (36 μm thickness) with an overall actuator thickness of 0.401 mm. The textured and random 0.37PMN-0.29PIN- 0.34PT ceramics-based multilayered actuators achieved displacements of 0.61 μm (0.15% strain) and 0.23 μm (0.057% strain) at a low applied peak voltage of 100 V. These results suggest that the developed multilayered actuator using high-performance textured 0.37PMN-0.29PIN-0.34PT ceramics has the potential to replace expensive single crystal-based actuators costeffectively.

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

An improvement of light-extraction efficiency of organic light-emitting diodes was studied by using random-textured films (RTF). Device was made in a structure of RTF/glass/ITO/TPD/Alq3/LiF/Al. RTF mold was made by spreading PDMS solution on a sandpaper. By pressing this mold on the glass substrate pre-coated with ZPU material, the RTF was obtained. From this study, there was an improvement of external quantum efficiency by about 30% in the device with the random-textured film (RTF 40) compared to that of the reference one.

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of 1.0×10-3 Ω·cm was achieved even after the etching.

We were studied that AZO conductive thin film can substitute for FTO electrode in dye sensitized solar cell. Three types of AZO films were deposited on soda-lime glass(AZO/glass, AZO/AZO/glass, textured AZO/AZO/glass) using RF magnetron sputtering process and investigated their properties of electrical, optical, and photoelectric conversion rate. The textured AZO/AZO/glass has the lowest resistivity of 3.079×10-4 Ω㎝ among other films. And the optical transmittance rate was better than both non textured AZO/AZO/glass and FTO/glass in the visible region. After manufacturing dye solar cells using the three types of AZO films, the textured AZO/AZO/glass showed the highest photoelectric conversion rate of 3.68% among AZO samples. But the transformation rate was slightly lower than FTO cells (4.52%). However, the conductive film of textured AZO/AZO/glass can be applicable to use an electrode in solar cells as cost-effective products.