The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thickepitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, t_off, of SITH, which may be reduced to below ~0.26 μs for the proposed 1,700 V SITH devicesafter optimization.