In the present study, the CuNx-Cu-CuNx layer the partial pressure ratio Cu metal of Ar and N2 gas using a DC magnetron sputtering device, was generated by the In-situ method. CuNx layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. CuNx layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. Ar:N2 gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of △ Ra surface roughness of 0.467. It was derived CuNx band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the 1.2 ㏀ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: 4/270 ㎛) is in the range of the reference operation.