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"Spinel"

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"Spinel"

Electrical Properties of Manganite Thin Films Prepared by Spin Spray Method
Chang Jun Jeon, Young Hun Jeong, Ji Sun Yun, Woon Ik Park, Jong Hoo Paik, Youn Woo Hong, Jeong Ho Cho
J Electr Electron Mater 2017;30(1):17-22.   Published online January 1, 2017
Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the Mn3+/Mn4+. Typically, the resistivity of 70.5 Ω · ㎝ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at 450℃ for 3 h.
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Regular Paper : Spin Spray-Deposited Spinel Thin Films for Microbolometer Applications
Chang Jun Jeon, Kui Woong Lee, Duc Thang Le, Young Hun Jeong, Ji Sun Yun, Jong Hoo Paik, Jeong Ho Cho
J Electr Electron Mater 2014;27(12):809-814.   Published online December 1, 2014
Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from [(Ni0.30Co0.33Mn0.37)1-xCux]3O4 (0.1≤x≤0.2) solutions and then annealed at 400℃ for 1 h inargon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below 50℃. Typically, the resistivity of 127 Ω·cm and TCR of -5.69%/Kat 30℃ were obtained for x=0.1 films with deposition time of 1 min annealed at 400℃ for 1 h in argon.
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High Yoliage Engineering Foliage : A Study on the Microstructure and Electrical Characteristics of ZnO Varistor for d.c. Arrester
Seok Sou Kim, Ike Sun Choi, Tae Gon Park, I Gon Cho, Choon Hyun Park
J Electr Electron Mater 2004;17(6):683-689.   Published online June 1, 2004
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