Indium-doped Mg_0.05Zn_0.95O thin films were deposited on glass substrates by a sol-gel method. Three types of indium precursors such as indium chloride, indium acetate, and indium nitrate were used as doping sources. Physical properties of fabricated thin films were analyzed through XRD (x-ray diffraction), UV-vis spectrophotometer, Hall effect measurement, and EDS (energy dispersive x-ray spectroscopy). All In-doped thin films grown in this study exhibited a preferred orientation of (002) with over 80% transmittance. The results showed that the Mg_0.05Zn_0.95O thin film from indium chloride as the indium precursor has higher crystallinity and transmittance with lower resistivity when compared with those from other indium precursors.

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

Copper manganite thin films were fabricated on SiNx/Si substrate by metal organic decomposition (MOD) process. They were burned-out at 400℃ and annealed at various temperatures (400∼800℃) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganitefilm with a cubic spinel structure was well developed at 500℃ which confirmed by XRD and HRTEM analysis. It showed a low resistivity (47.5 Ω·cm) at room temperature and high NTCR characteristics of-4.12%/℃ and -2.15%/℃ at room temperature and 85℃, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to 600℃. However, the appearance of secondary phase at temperatures higher than 600℃ lead to deteriorate the NTCR characteristics.

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of 414.9℃ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA)curve. A single phase of cubic spinel structure was obtained for the thin film annealed from 700℃ to 800℃,which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction(SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2∼3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at 500℃, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.

In this paper, we present a novel hydrophilic coating material (Wellture Finetech, Korea) which can be utilized as a coating layer for anti-contamination for electrical and electronic system. The coating material was deposited on 4 inch silicon wafer with several different film thickness. The film thickness was controlled by spin coating speed. After curing of the film, we have scratched by permanent marker to check self-cleaning property of the film. Also we have executed several mechanical tests of the films. As the spin coating speed is increased, the film thickness was thickness was thinned from 230 nm to 125nm. Contact angle of the film lowered from 30° to 12° as the spin coating speed is increased from 700 to 2,500rpm. On permanent marker scratched film surface coated at 1,000 rpm. We have poured regular city water to investigate self cleaning property of the film. The scratches were gradually separated from the film surface due to super-hydrophilicity of the film. Hardness of coated film was 9H measured by ASTM D3363 method. And adhesion of all film was 5B tested by D3359 method. Also, to get exact hardness value of the film, we have utilized a nano-indenter. As spin speed is increased, the hardness of film was increased from 3 Gpa to 5 Gpa.