This paper reports a method to use a wireless sensor network deployed in the field to real-time monitor soil moisture, warning when the moisture level reaches a specific value, and wirelessly controlling an additional device (LED or water supply system, etc.). In addition, we report all processes related to wireless irrigation system, including field deployment of sensors, real-time monitoring using a smartphone, data calibration, and control of additional devices deployed in the field by smartphone. A commercially available open-source Internet of Things (IoT) platform, NodeMCU, was used, which was combined with a 9V battery, LED and soil humidity sensor to be integrated into a portable prototype. The IoT-based soil humidity sensor prototype deployed in the field was installed next to a tree for on-site demonstration for the measurement of soil humidity in real-time for about 30 hours, and the measured data was successfully transmitted to a smartphone via Wifi. The measurement data were automatically transmitted via e-mail in the form of a text file, stored on the web, followed by analyses and calibrations. The user can check the humidity of the soil real-time through a personal smartphone. When the humidity of a soil reached a specific value, an additional device, an LED device, placed in the field was successfully controlled through the smartphone. This LED can be easily replaced by other electronic devices such as water supplies, which can also be controlled by smartphones. These results show that farmers can not only monitor the condition of the field real-time through a sensor monitoring system manufactured simply at a low cost but also control additional devices such as irrigation facilities from a distance, thereby reducing unnecessary energy consumption and helping improve agricultural productivity.

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT`s. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT`s due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

Analyzing electrical degradation of polycrystalline silicon transistor to applicable at several environment is very important issue. In this research, after fabricating p channel poly crystalline silicon TFT (thin film transistor) electrical characteristics were compare and analized that changed by gate bias with first measurement. As a result on and off current was reduced by variation of gate bias and especially re duce ratio of off current was reduced by 7.1×101. On/off current ratio, threshold voltage and electron mobility increased. Also, when channel length gets shorter on/off current ratio was increased more and thresh old voltage increased less. It was cause due to electron trap and de-trap to gate silicon oxide by variation of gate bias.