In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at 25℃ increases rapidly in comparison to the volume resistance at 90℃. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is 0.8 kgf/㎟ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

In this paper, semiconducting shield specimens for a DC cable os fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at 25℃ increases rapidly in comparison to the volume resistance at 90℃. Since the compounding ration of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is 0.8 kgf/mm2 and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.