Conductive inks are essential for developing flexible and wearable electronic devices, where printability and electrical performance must be finely balanced. However, achieving high conductivity while minimizing costly silver filler content remains a key challenge in ink formulation. In this work, we demonstrate that a simple ball-milling process transforms spherical silver particles into platelet-shaped fillers, dramatically enhancing conductivity at equivalent filler loading. The resulting inks show a reduction in sheet resistance from ~180 Ω/□ to ~ 0.57 Ω/□ at 70 wt% filler content, with improved performance attributed to surface-to-surface contact between platelets. Moreover, we show that filler content influences not only electrical conductivity but also ink viscosity, with the 53.8 wt% formulation achieving a practical balance between conductivity, processability, and cost. This morphology- and composition-controlled ink design offers a scalable strategy for manufacturing high-performance, cost-effective conductive inks suitable for next-generation printed electronics.

Heaters using the resistance heating principle are used in various industrial fields that require heat and are also essentially used in bidet among small home appliances. A planar heater and a coil-inserted heater mounted on a conventional commercially used bidet have disadvantages and limitations of complicated manufacturing process and local heating. In this study, silver-palladium (Ag-Pd) powder material was used for a screen-printing process that is more advantageous in achieving simplification than the existing process, and a rod-type heater for bidet was manufactured. The on-off cycle test under actual conditions was conducted to confirm the durability and the capability of the fabricated heater, and the fabricated heater operated more than 2,600 on-off cycles, which means it could be applied for a commercial product. In addition, through the on-off cycles under harsh conditions, the cause of failure was identified after the test that the durability limit temperature of the heater was 850℃. Through Ag-Pd rod heater in this study, it is expected to contribute to the efficient development of electrode materials for heaters and the improvement of the durability of heaters in the future.

Heterolayered K(Ta,Nb)O₃/Pb(Zr,Ti)O₃ thin films on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process and spin-coating method. The structural and electrical properties were measured to investigate the possibility of application as an electrocaloric effect device. All specimens exhibited dense and uniform cross-sectional structures without pores, and the average thickness of the specimen coated six times was approximately 394 nm. Curie temperatures were observed at 5℃ or less in type-Ⅰ and 10℃ in type-Ⅱ specimens, respectively. Type-Ⅱ specimens coated 6 times showed a relative dielectric constant of 758 and remanent polarization of 9.71 μC/cm₂ at room temperature. The maximum electrocaloric effect occurred between 20 and 25℃, slightly higher than their Curie temperature, and the electrocaloric property (ΔT) of the type-Ⅱ specimens coated 6 times was approximately 1.2℃ at room temperature.

In this study, image analysis and surface roughness measurements using an optical microscope are presented as a method to quantitatively evaluate the results of screen printing. Using this method, the squeegee speed, which is the printing process condition, and the printability of the electrode according to the screen mesh were evaluated. Increasing the squeegee speed in the printing process acts as a process element that increases the line width precision of the printed electrode and lowers the surface roughness of the printed surface. Furthermore, the edge roughness, which indicates the clarity of printing, was not significantly affected by the speed of the squeegee during printing. The print thickness increases in proportion to the squeegee speed, but is largely dependent on the screen thickness.

We fabricated a printed Ag:CNT film as a liquid sensor for the detection of HNS (hazardous and noxious substances) in seawater. The paste required for printing was prepared using Ag powder, MWCNTs (multi-walled carbon nanotubes), and an organic binder. The heat treatment process for binder removal was optimized. In order to confirm that the sensor was operational, the resistance change characteristics in brine (3.5%) and methanol (99.8%) were assessed at 20℃. EDL (electrical double layer) formation and redox reactivity were confirmed as the most important reactions affect each electrical property of sensor in brine and methanol. From these results, it was determined that printed Ag:CNT film can be applied as a sensor to detect HNS in seawater.

A piezoelectric cantilever energy harvester (PCEH) driven in longitudinal (3-3) vibration mode was fabricated, and its electrical properties were evaluated by varying the resistive load. A commercial PZT piezoelectric ceramic with a high piezoelectric charge constant (d₃₃) of 520 pC/N and the interdigitated (IDT) electrode pattern was used to fabricate the PCEH driven in longitudinal vibration. The IDT Ag electrode embedded piezoelectric laminates were co-fired at 850℃ for 2 h. The 3-3 mode PCEH was successfully fabricated by attaching the piezoelectric laminates to a SUS304 elastic substrate. The PCEH exhibited a high output power of 3.8 mW across the resistive load of 100 kΩ at 100 Hz and 1.5 G. This corresponds to a power density of 10.3 mW/cm³ and a normalized global power factor of 4.56 mW/g²·cm³. Given the other PCEH driven in transverse (3-1) vibration mode, the 3-3 mode PCEH could be better for vibration energy harvesting applications.

Piezoelectric thick films of a soft Pb(Zr,Ti)O₃ (PZT) based commercial material were produced by a conventional tape casting method. Thereafter, the interdigitated (IDT) Ag-Pd electrode pattern was printed on the 25 ㎛ thick piezoelectric film at room temperature. Co-firing of the 10-layer laminated piezoelectric thick films was conducted at 1,100℃ and 1,150℃ for 1 h, respectively. Piezoelectric cantilever energy harvesters were successfully fabricated using the IDT electrode pattern embedded piezoelectric laminates for 3-3 operation mode. Their energy harvesting characteristics were investigated with an excitation of 120 Hz and 1 g under various resistive loads (ranging from 10 kΩ to 200 kΩ). A parabolic increase of voltage and a linear decrease of current were shown with an increase of resistive load for all the energy harvesters. In particular, a high output power of 3.64 mW at 100 kΩ was obtained from the energy harvester (sintered at 1,150℃).

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below 670℃ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of 5.99 mΩ㎠ was shown for the optimum firing temperature of 865℃. Over 900℃, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of 40.2 mA/cm2, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

For the semiconductor device safety from over current in the digital electronic circuit systemmust be surely designed that it`s surface mount type micro fuse device. In this paper, We has analysedto the fusing character of micro fuse as a function changed thickness of thermosetting ink epoxy. To thechange of thermosetting ink epoxy thickness with in production lot, in the electrically character (fusingtest in the 2 multiple over current and 10 multiple over current, surface temperature test in the 1.25multiple over current) of micro fuse has been tested. According to the electrically character result,changed thickness of thermosetting ink epoxy in designed micro fuse withheld direct effect in both endresistance changes. Also, because high thermal energy in the micro fuse test of over current wasoccurred to effect such as thermal runaway and explosion. Therefore, screen printing process in thedesign of micro fuse using thermosetting ink epoxy is very important for production quality improvement.

The screen printed technique is one of the electrode forming technologies for crystalline silicon solar cell. It has the advantage that can raise the production efficiency due to simple process. The electrode technology is the core process because the electrode feature is given a substantial factor (for solar cell efficiency). In this paper, we tried to change conditions such as squeegee angle 55∼75°, snap off 0.5∼1.75mm, printing pressure 0.6∼0.3 MPa and 1.6∼2.0 mm finger spacing. As a result, the screen printing process showed an improved performance with an increased height higher finger height. Optimization of fabrication process has achieved 17.48% efficiency at screen mesh of 1.6 mm finger spacing.

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec～5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

Resistance of the front electrode is the highest proportion of the ingredients of the series resistance in crystalline silicon solar cell. While resistance of the front electrode is decreased with larger area, it induces the optical loss, causing the conversion efficiency drop. Therefore the front electrode with high aspect ratio increasing its height and decreasing is necessary for high-efficiency solar cell in considering shadowing loss and resistance of front electrode. In this paper, we used the screen printing method to form high aspect ratio electrode by multiple printing. Screen printing is the straightforward technology to establish the electrodes in silicon solar cell fabrication. The several printed front electrodes with Ag paste on silicon wafer showed the significantly increased height and slightly widen finger. As a result, the resistance of the front electrode was decreased with multiple printing even if it slightly increased the shadowing loss. We showed the improved electrical characteristics for c-Si solar cell with repeatedly printed front electrode by 0.5%. It lays a foundation for high efficiency solar cell with high aspect ratio electrode using screen printing.

As an alternative energy, Dye-sensitized solar cells (DSSCs) have received much attention due to low cost manufacturing procedure and high energy consumption rate. Incorporating scattering centers in the nanocrystalline photoanode or additional scattering layers on the nanocrystalline photoanode is an effective way to enhance the light harvest efficiency of the photoanode and the performance of dye-sensitized solar cells (DSSCs). The light scattering abilities of these scattering layers also depend on the relative sizes and phase of the particles in the layers. A higher surface area is normally obtained using large particle sizes. Therefore, transparent high surface area TiO2 layers and an additional scattering layer consisting of TiO2 -Rutile 500 ㎚paste with relatively larger particles are attractive. In this work, we investigates the applicability of a hybrid TiO2 electrode (or a working electrode with a light scattering layer) in a DSSCs. We fabrication various thin film using TiO2 paste 20 ㎚and TiO2 paste 500 ㎚. As a result, the efficiency of the a single structure thin film was 3.35% and the efficiency as scattering layer of hybrid structure thin film was 4.36%, 4.73%.

In this paper a printing process for patterning electrodes on large area substrate was developed by combining screen printing with reverse off-set printing. Ag ink was uniformly coated by screen printing. And then etching resist (ER) was patterned in the Ag film by reverse off-set printing, and then the non-desired Ag film was etched off by etchant. Finally, the ER was stripped-off to obtain the final Ag patterns. We extracted the suitable conditions of reverse Using the process we successfully fabricated gate electrodes and scan bus lines of OTFT-backplane used for e-paper, in which the diagonal size was 6 inch, the resolution 320x240, the minimum line width 30 um, and sheet resistance 1 Ω/□.